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Optical coherent injection of carrier and current in twisted bilayer graphene 期刊论文
Physical Review B, 2022, 卷号: 105, 期号: 8, 页码: 9
作者:  Z. Zheng;  Y. Song;  Y. W. Shan;  W. Xin and J. L. Cheng
浏览  |  Adobe PDF(1133Kb)  |  收藏  |  浏览/下载：98/43  |  提交时间：2023/06/14
Doping in the two-dimensional limit: p/n-type defects in monolayer ZnO 期刊论文
Physical Review B, 2022, 卷号: 105, 期号: 2, 页码: 7
作者:  D. Han;  X. B. Li;  D. Wang;  N. K. Chen and X. W. Fan
浏览  |  Adobe PDF(4032Kb)  |  收藏  |  浏览/下载：67/15  |  提交时间：2023/06/14
Annihilation mechanism of excitons in a MoS2 monolayer through direct Forster-type energy transfer and multistep diffusion 期刊论文
Physical Review B, 2020, 卷号: 101, 期号: 19, 页码: 9
作者:  K. J. Lee, W. Xin and C. L. Guo
浏览  |  Adobe PDF(1421Kb)  |  收藏  |  浏览/下载：127/41  |  提交时间：2021/07/06
Exciton dynamics in two-dimensional MoS2 on a hyperbolic metamaterial-based nanophotonic platform 期刊论文
Physical Review B, 2020, 卷号: 101, 期号: 4, 页码: 6
作者:  K. J. Lee,W. Xin,C. Fann,X. L. Ma,F. Xing,J. Liu,J. H. Zhang,M. Elkabbash and C. L. Guo
浏览  |  Adobe PDF(1326Kb)  |  收藏  |  浏览/下载：139/46  |  提交时间：2021/07/06
Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
浏览  |  Adobe PDF(4756Kb)  |  收藏  |  浏览/下载：179/62  |  提交时间：2020/08/24
single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics  
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:  P.Klenovsky;  A.Schliwa;  D.Bimberg
浏览  |  Adobe PDF(1784Kb)  |  收藏  |  浏览/下载：189/64  |  提交时间：2020/08/24
cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures  
Third harmonic generation of undoped graphene in Hartree-Fock approximation 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 24, 页码: 8
作者:  J.L.Cheng;  J.E.Sipe;  C.L.Guo
浏览  |  Adobe PDF(604Kb)  |  收藏  |  浏览/下载：133/60  |  提交时间：2020/08/24
Materials Science,Physics  
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West;  V. Meunier;  S. B. Zhang and H. B. Sun
浏览  |  Adobe PDF(1327Kb)  |  收藏  |  浏览/下载：318/89  |  提交时间：2018/06/13