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Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133
作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi;  Z.Huang;  W.Yu;  X.Sun;  X.Liu;  D.Li
浏览  |  Adobe PDF(1690Kb)  |  收藏  |  浏览/下载：265/71  |  提交时间：2020/08/24
Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：245/68  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band 期刊论文
Light: Science and Applications, 2019, 卷号: 8, 期号: 1
作者:  H.-Y.Lu;  S.-C.Tian;  C.-Z.Tong;  L.-J.Wang;  J.-M.Rong
浏览  |  Adobe PDF(1422Kb)  |  收藏  |  浏览/下载：201/54  |  提交时间：2020/08/24
Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers  
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
浏览  |  Adobe PDF(404Kb)  |  收藏  |  浏览/下载：557/123  |  提交时间：2019/09/17
Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array 期刊论文
Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 9
作者:  Ban, Zhang;  Liang, Jingqiu;  Lu, Jinguang;  Li, Yang
Adobe PDF(1910Kb)  |  收藏  |  浏览/下载：441/148  |  提交时间：2019/09/17
Flip chip devices  Aluminum alloys  Copper  Diodes  Energy utilization  Gallium alloys  Heat convection  Heat resistance  III-V semiconductors  Indium alloys  Light emitting diodes  Microchannels  Numerical methods  Optical devices  Photoelectricity  Polydimethylsiloxane  Semiconductor alloys  Silicones  Temperature  
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian;  Sun, Xiaojuan;  Li, Dabing;  Gao, Hongwei;  Zhou, Yu;  Zhang, Shuming;  Li, Deyao;  Zhang, Liqun;  Liu, Jianping;  Wang, Huaibing;  Ikeda, Masao;  Zheng, Xinhe;  Yang, Hui
浏览  |  Adobe PDF(3885Kb)  |  收藏  |  浏览/下载：520/115  |  提交时间：2019/09/17
Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion