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Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
浏览  |  Adobe PDF(1549Kb)  |  收藏  |  浏览/下载:625/118  |  提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics  
Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 17, 页码: 15804-15812
作者:  C.C.Tian;  F.Wang;  Y.P.Wang;  Z.Yang;  X.J.Chen;  J.J.Mei
浏览  |  Adobe PDF(4813Kb)  |  收藏  |  浏览/下载:496/93  |  提交时间:2020/08/24
all-inorganic perovskites,CVD,photodiode photodetectors,self-powered,photodetectors,CsPbBr3 microcrystals,cspbbr3,Science & Technology - Other Topics,Materials Science  
直立Zn_2GeO_4/ZnO纳米棒阵列的制备及其发光性质研究 期刊论文
发光学报, 2014, 期号: 10, 页码: 1188-1193
作者:  李婷;  方芳;  周政;  赵海峰;  方铉;  李金华;  楚学影;  魏志鹏;  房丹;  王晓华
caj(791Kb)  |  收藏  |  浏览/下载:495/136  |  提交时间:2015/04/17
Cvd  直立  Zn2geo4/zno纳米棒阵列  发光特性  
H_2稀释度对HFCVD法沉积SiC薄膜结晶度的影响 期刊论文
长春理工大学学报, 2005, 期号: 01, 页码: 90-92
作者:  王辉;  宋航;  金亿鑫;  蒋红;  缪国庆
caj(80Kb)  |  收藏  |  浏览/下载:476/74  |  提交时间:2013/03/11
碳化硅  H2稀释度  热丝cvd