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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2019, 卷号: 62, 期号: 6, 页码: 6
作者:  Kai, CuiHong;  Sun, XiaoJuan;  Jia, YuPing;  Shi, ZhiMing;  Jiang, Ke;  Ben, JianWei;  Wu, You;  Wang, Yong;  Liu, HeNan;  Li, XiaoHang;  Li, DaBing
收藏  |  浏览/下载：628/0  |  提交时间：2019/05/22
pit defects  surface potential  electron concentration