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Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 3, 页码: 311-317
作者:  X.K.Liu;  Y.X.Chen;  D.B.Li;  S.W.Wang;  C.C.Ting;  L.Chen
浏览  |  Adobe PDF(1124Kb)  |  收藏  |  浏览/下载:255/81  |  提交时间:2020/08/24
mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics  
Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
作者:  Y.Chen;  Y.P.Jia;  Z.M.Shi;  X.J.Sun;  D.B.Li
浏览  |  Adobe PDF(443Kb)  |  收藏  |  浏览/下载:190/67  |  提交时间:2020/08/24
gan,layer,aln,Engineering,Materials Science