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Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar;  H. Yang;  J. Cao;  X. Huang;  W. Niu;  I. T. Ferguson;  L. Wan and Z. C. Feng
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Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
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Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers 期刊论文
Materials Chemistry and Physics, 2020, 卷号: 252, 页码: 16
作者:  D. N. Talwar,H. H. Lin and Z. C. Feng
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