Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

doi:10.1007/s10853-020-05343-6

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	Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures
	M. Tian; C. Ma; T. Lin; J. Liu; D. N. Talwar; H. Yang; J. Cao; X. Huang; W. Niu; I. T. Ferguson; L. Wan and Z. C. Feng
	2021
发表期刊	Journal of Materials Science
ISSN	222461
卷号	56 期号:2 页码:1481-1491
摘要	Exciton localization phenomena are considered here to comprehend the high internal quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum dots (QDs) prepared by metalorganic-chemical-vapor deposition method on c-sapphire substrates. Spectroscopic results from the variable-temperature steady-state-photoluminescence and time-resolved photoluminescence (TRPL) are investigated. While the exciton localization is enhanced by strong localized states within the InGaN/GaN QDsthe impact of free carrier recombination cannot be ignored. The observed non-exponential decay in TRPL measurements is explained using a model by meticulously including localized exciton, non-radiative and free carrier recombination rates. A new method is proposed to calculate the internal quantum efficiency, which is supplementary to the traditional approach based on temperature-dependent photoluminescence measurement. 2020, Springer Science+Business Media, LLC, part of Springer Nature.
DOI	10.1007/s10853-020-05343-6
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收录类别	EI
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65084
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	M. Tian,C. Ma,T. Lin,et al. Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures[J]. Journal of Materials Science,2021,56(2):1481-1491.
APA	M. Tian.,C. Ma.,T. Lin.,J. Liu.,D. N. Talwar.,...&L. Wan and Z. C. Feng.(2021).Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures.Journal of Materials Science,56(2),1481-1491.
MLA	M. Tian,et al."Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures".Journal of Materials Science 56.2(2021):1481-1491.

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