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Enhancement of near-infrared response for GaAs-based photocathode with laminated graded-bandgap structure: theory and experiment 期刊论文
Journal of Materials Research and Technology-Jmr&T, 2022, 卷号: 19, 页码: 2008-2017
作者:  Z. H. Wang;  Y. J. Zhang;  S. M. Li;  S. Li;  J. J. Zhan;  Y. S. Qian;  F. Shi;  H. C. Cheng;  G. C. Jiao and Y. G. Zeng
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High-order harmonics generation in the laser-induced lead-free perovskites-containing plasmas 期刊论文
Scientific Reports, 2022, 卷号: 12, 期号: 1, 页码: 13
作者:  V. V. Kim;  R. A. Ganeev;  S. R. Konda;  G. S. Boltaev;  I. B. Sapaev;  W. L. Yu and W. Li
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Development of structure and tuning ability of the luminescence of lead-free halide perovskite nanocrystals (NCs) 期刊论文
Chemical Engineering Journal, 2020
作者:  S. A. Khan,C. Li,A. Jalil,X. Xin,M. Rauf,J. Ahmed,M. A. M. Khan,B. Dong,J. Zhu and S. Agathopoulos
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Electrically-Driven Violet Light-Emitting Devices Based on Highly Stable Lead-Free Perovskite Cs3Sb2Br9 Quantum Dots 期刊论文
Acs Energy Letters, 2020, 卷号: 5, 期号: 2, 页码: 385-394
作者:  Z. Z. Ma,Z. F. Shi,D. W. Yang,F. Zhang,S. Li,L. T. Wang,D. Wu,Y. T. Zhang,G. R. Na,L. J. Zhang,X. J. Li,Y. Zhang and C. X. Shan
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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
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single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics  
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:  P.Klenovsky;  A.Schliwa;  D.Bimberg
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cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
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Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
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Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 47, 页码: 11
作者:  Zhang, J. L.;  Han, C.;  Hu, Z. H.;  Wang, L.;  Liu, L.;  Wee, A. T. S.;  Chen, W.
浏览  |  Adobe PDF(3748Kb)  |  收藏  |  浏览/下载:536/153  |  提交时间:2019/09/17
2D phosphorene  electronic devices  epitaxial growth  interface  engineering  layer black phosphorus  2-dimensional materials  band-gap  transport-properties  carrier mobility  blue phosphorus  graphene  surface  functionalization  semiconductors  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Preparation of three-dimensional Ce-doped Sn3O4 hierarchical microsphere and its application on formaldehyde gas sensor 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 726
作者:  Ma, X. H.;  J. L. Shen;  D. X. Hu;  L. Sun;  Y. Chen;  M. Liu;  C. N. Li and S. P. Ruan
浏览  |  Adobe PDF(3592Kb)  |  收藏  |  浏览/下载:359/119  |  提交时间:2018/06/13