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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN 期刊论文
International Journal of Smart and Nano Materials, 2020, 卷号: 11, 期号: 3, 页码: 288-297
作者:  W. T. Hou,Z. B. Qi,H. Zang,Y. Yan and Z. M. Shi
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Polarization-enhanced AlGaN solar-blind ultraviolet detectors 期刊论文
Photonics Research, 2020, 卷号: 8, 期号: 7, 页码: 1243-1252
作者:  K. Jiang,X. J. Sun,Z. H. Zhang,J. W. Ben,J. M. Che,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,W. Lv and D. B. Li
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Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors 期刊论文
Npj 2d Materials and Applications, 2020, 卷号: 4, 期号: 1, 页码: 7
作者:  Y. P. Jia,Z. M. Shi,W. T. Hou,H. Zang,K. Jiang,Y. Chen,S. L. Zhang,Z. B. Qi,T. Wu,X. J. Sun and D. B. Li
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Experimental Demonstration of Single Sideband Modulation Utilizing Monolithic Integrated Injection Locked DFB Laser 期刊论文
Journal of Lightwave Technology, 2020, 卷号: 38, 期号: 7, 页码: 1809-1816
作者:  Y. S. Zhang,B. C. Yuan,L. Y. Li,J. Zeng,Z. J. Shang,J. L. Zheng,L. Zuye,S. J. Guan,X. Zhang,R. L. Xiao,T. Fang,Y. C. Shi,H. Zou,J. P. Shen and X. F. Chen
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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