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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 20
作者:  Wang, D.;  D. Han;  X. B. Li;  S. Y. Xie;  N. K. Chen;  W. Q. Tian;  S. B. Zhang and H. B. Sun
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Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文
Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5
作者:  Chen Y. R.;  Song H.;  Jiang H.;  Li Z. M.;  Zhang Z. W.;  Sun X. J.;  Li D. B.;  Miao G. Q.
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Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy 期刊论文
Applied Physics Letters, 2009, 卷号: 95, 期号: 19
作者:  Li X. H.;  Xu H. Y.;  Zhang X. T.;  Liu Y. C.;  Sun J. W.;  Lu Y. M.
Adobe PDF(617Kb)  |  收藏  |  浏览/下载:521/130  |  提交时间:2012/10/21
Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy 期刊论文
Applied Physics Letters, 2006, 卷号: 89, 期号: 23
作者:  Sun J. W.;  Lu Y. M.;  Liu Y. C.;  Shen D. Z.;  Zhang Z. Z.;  Li B. H.;  Zhang J. Y.;  Yao B.;  Zhao D. X.;  Fan X. W.
Adobe PDF(436Kb)  |  收藏  |  浏览/下载:552/128  |  提交时间:2012/10/21