Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification | |
B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou | |
2020 | |
发表期刊 | Applied Surface Science
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ISSN | 0169-4332 |
卷号 | 518页码:7 |
摘要 | We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by introducing voids during growth. Voids are embedded into AlN epilayers through a growth-mode transition from island growth to step flow growth. Such voids significantly facilitated the underlying dislocations annihilation as demonstrated by the transmission electron microscopy (TEM) image. For the 3 mu m-thick AlN film grown on FSS, the full width at half maximum of the X-ray rocking curve was 57/260 arcsec for (0 0 2)/(1 0 2) reflection and a threading dislocation density of 1.7 x 10(8) cm(-2) was determined from plain-view TEM image. Moreover, the voids provided an additional stress relief channel in the AlN film grown on FSS, resulting in a tensile stress comparable to that of grown on nano-patterned sapphire substrate (NPSS). The measured lattice constants and Raman shift of AlN-E-2 (high) peak verified the 3 mu m-thick AlN film grown on FSS is nearly stress free at room temperature. Taking advantages of the deliberately embedded voids, a crack-free and atomically flat AlN film was grown on FSS. The strategy put forward in this work to obtaining high-quality AlN films on FSS is much cost-efficient, which is believed to hold great promise for commercialization in AlN-based devices. |
DOI | 10.1016/j.apsusc.2020.146218 |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/64547 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou. Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification[J]. Applied Surface Science,2020,518:7. |
APA | B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou.(2020).Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification.Applied Surface Science,518,7. |
MLA | B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou."Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification".Applied Surface Science 518(2020):7. |
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