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120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers
A. Kotb and C. L. Guo
2020
发表期刊Journal of Modern Optics
ISSN0950-0340
卷号67期号:12页码:1138-1144
摘要In this paper, the unique features of the reflective semiconductor optical amplifiers (RSOAs) are exploited to numerically simulate the ultrafast performance of an all-optical NOT-AND (NAND) logic gate for the first time using a return-to-zero modulation format at a data rate of 120 Gb/s. A comparison is made between RSOAs and conventional SOAs through studying the dependence of the gate's quality factor (QF) on the critical operational parameters, including the effects of both amplified spontaneous emission and operating temperature to get more realistic results. The results show that the all-optical NAND logic gate can be executed at 120 Gb/s using the RSOAs scheme with a higher QF than when using conventional SOAs.
DOI10.1080/09500340.2020.1813342
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收录类别SCI ; EI
语种英语
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被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/64273
专题中国科学院长春光学精密机械与物理研究所
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A. Kotb and C. L. Guo. 120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers[J]. Journal of Modern Optics,2020,67(12):1138-1144.
APA A. Kotb and C. L. Guo.(2020).120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers.Journal of Modern Optics,67(12),1138-1144.
MLA A. Kotb and C. L. Guo."120 Gb/s all-optical NAND logic gate using reflective semiconductor optical amplifiers".Journal of Modern Optics 67.12(2020):1138-1144.
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