Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core

doi:10.1016/j.jlumin.2018.02.045

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	Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core
	Xie, X. H.; Li, B. H.; Zhang, Z. Z.; Shen, D. Z.
	2018
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	198 页码:178-182
摘要	We investigated the spatial cathodoluminescence (CL) quenching of Si doped AlN/Al shell/core particles along the radial direction. The quenching characteristic position gradually shifts to a more central location with emission wavelength increasing. This effect is due to the transport process of hot electrons, which produced by Al-plasmon decay via Landau damping. In this transport process, donor levels (D-i) in AlN were partly occupied by hot electrons from Al core, which will reduce the quantum efficiency of recombination channel i (D-i to A(i)). A phenomenological theory has been used to discuss carriers recombination dynamics processes.
关键词	molecular-beam epitaxy plasmon Optics
DOI	10.1016/j.jlumin.2018.02.045
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61022
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,et al. Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core[J]. Journal of Luminescence,2018,198:178-182.
APA	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,&Shen, D. Z..(2018).Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core.Journal of Luminescence,198,178-182.
MLA	Xie, X. H.,et al."Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core".Journal of Luminescence 198(2018):178-182.

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