CIOMP OpenIR  > 中科院长春光机所知识产出
High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties
Zhang, Z. W.; G. Q. Miao; H. Song; D. B. Li; H. Jiang; Z. M. Li; Y. R. Chen and X. J. Sun
2017
Source PublicationApplied Physics a-Materials Science & Processing
Volume123Issue:4
AbstractThe design of novel structural material is an effective way to improve photodetection device performance. In this paper, the fabrication and performance of high In content InGaAs detectors were investigated. Using the two-step growth method, mismatch defect was effectively inhibited even with larger lattice mismatch at the interface. Meanwhile, the spectral response can cover the entire near-infrared region at room temperature. Through experiments and simulation, the optoelectronic properties of detector with different materials in the p-region are explored, elucidating the critical role of cap material in the transport properties of carriers. Compared to the typical InP cap detector, the InAsP cap detector shows better device performance. Also the dark current mechanism is analyzed on the basis of bias-temperature relation, and the result shows that the tunneling current plays a key role at high bias or low temperature. The introduction of a novel InGaAs detector provides a potential application to the development of near-infrared detection.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59467
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Zhang, Z. W.,G. Q. Miao,H. Song,et al. High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties[J]. Applied Physics a-Materials Science & Processing,2017,123(4).
APA Zhang, Z. W..,G. Q. Miao.,H. Song.,D. B. Li.,H. Jiang.,...&Y. R. Chen and X. J. Sun.(2017).High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties.Applied Physics a-Materials Science & Processing,123(4).
MLA Zhang, Z. W.,et al."High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties".Applied Physics a-Materials Science & Processing 123.4(2017).
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