CIOMP OpenIR  > 中科院长春光机所知识产出
High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties
Zhang, Z. W.; G. Q. Miao; H. Song; D. B. Li; H. Jiang; Z. M. Li; Y. R. Chen and X. J. Sun
2017
发表期刊Applied Physics a-Materials Science & Processing
卷号123期号:4
摘要The design of novel structural material is an effective way to improve photodetection device performance. In this paper, the fabrication and performance of high In content InGaAs detectors were investigated. Using the two-step growth method, mismatch defect was effectively inhibited even with larger lattice mismatch at the interface. Meanwhile, the spectral response can cover the entire near-infrared region at room temperature. Through experiments and simulation, the optoelectronic properties of detector with different materials in the p-region are explored, elucidating the critical role of cap material in the transport properties of carriers. Compared to the typical InP cap detector, the InAsP cap detector shows better device performance. Also the dark current mechanism is analyzed on the basis of bias-temperature relation, and the result shows that the tunneling current plays a key role at high bias or low temperature. The introduction of a novel InGaAs detector provides a potential application to the development of near-infrared detection.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59467
专题中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Zhang, Z. W.,G. Q. Miao,H. Song,et al. High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties[J]. Applied Physics a-Materials Science & Processing,2017,123(4).
APA Zhang, Z. W..,G. Q. Miao.,H. Song.,D. B. Li.,H. Jiang.,...&Y. R. Chen and X. J. Sun.(2017).High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties.Applied Physics a-Materials Science & Processing,123(4).
MLA Zhang, Z. W.,et al."High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties".Applied Physics a-Materials Science & Processing 123.4(2017).
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
High in content InGa(2066KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zhang, Z. W.]的文章
[G. Q. Miao]的文章
[H. Song]的文章
百度学术
百度学术中相似的文章
[Zhang, Z. W.]的文章
[G. Q. Miao]的文章
[H. Song]的文章
必应学术
必应学术中相似的文章
[Zhang, Z. W.]的文章
[G. Q. Miao]的文章
[H. Song]的文章
相关权益政策
暂无数据
收藏/分享
文件名: High in content InGaAs.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。