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Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance
Yu, B.; C. S. Jin; S. Yao; C. Li; Y. Liu; F. Zhou; B. Y. Guo; H. Wang; Y. Xie and L. P. Wang
2017
Source PublicationApplied Optics
Volume56Issue:26
AbstractTo explore the potential of achieving low-stress and high-reflectance Mo/Si multilayers deposited by conventional magnetron sputtering with bias assistance, we investigated the effects of varying Ar gas pressure, substrate bias voltage, and a bias-assisted Si ratio on the stress and extreme ultraviolet (EUV) reflectance of Mo/Si multilayers. To reduce the damage of ion bombardments on an Si-on-Mo interface, only the final part of the Si layer was deposited with bias assistance. Bias voltage has strong influence on the stress. The compressive stress of Mo/Si multilayers can be reduced remarkably by increasing bias voltage due to the increase of Mo-on-Si interdiffusion and postponement of Mo crystallization transition. Properly choosing gas pressure and a bias-assisted Si ratio is critical to obtain high EUV reflectance. Appropriately decreasing gas pressure can reduce the interface roughness without increasing interdiffusion. Too much bias assistance can seriously reduce the optical contrast between Mo and Si layers and lead to a remarkable decrease of EUV reflectance. Thus, by appropriately choosing gas pressure, bias voltage, and a bias-assisted Si ratio, the stress values of Mo/Si multilayers can be reduced to the order of -100 MPa with an EUV reflectance loss of about 1%. (C) 2017 Optical Society of America
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59396
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Yu, B.,C. S. Jin,S. Yao,et al. Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance[J]. Applied Optics,2017,56(26).
APA Yu, B..,C. S. Jin.,S. Yao.,C. Li.,Y. Liu.,...&Y. Xie and L. P. Wang.(2017).Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance.Applied Optics,56(26).
MLA Yu, B.,et al."Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance".Applied Optics 56.26(2017).
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