Temperature- and current-dependent Spontaneous emission study on 2 m InGaSb/AlGaAsSb quantum well lasers

	Temperature- and current-dependent Spontaneous emission study on 2 m InGaSb/AlGaAsSb quantum well lasers
	Li, X.; H. Wang; Z. Qiao; Y. Liao; Y. Zhang; Y. Xu; Z. Niu; C. Tong and C. Liu
	2017
发表期刊	Japanese Journal of Applied Physics
卷号	56 期号:5
摘要	Spontaneous emission measurements, as a function of injection current and temperature, were carried out from the sidewall of a working 2 m InGaSb/AlGaAsSb quantum well laser. The local Z power parameter was extracted to investigate the carrier recombination behaviors. A model involving the activation energy is presented to interpret the carrier loss mechanisms. Our findings show that the majority of the injected carriers recombine radiatively at low injection currents, and that Auger nonradiative recombination increases significantly with injection current. More importantly, no obvious temperature dependence of Z is observed from 20 to 80 C. 2017 The Japan Society of Applied Physics.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59020
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, X.,H. Wang,Z. Qiao,et al. Temperature- and current-dependent Spontaneous emission study on 2 m InGaSb/AlGaAsSb quantum well lasers[J]. Japanese Journal of Applied Physics,2017,56(5).
APA	Li, X..,H. Wang.,Z. Qiao.,Y. Liao.,Y. Zhang.,...&C. Tong and C. Liu.(2017).Temperature- and current-dependent Spontaneous emission study on 2 m InGaSb/AlGaAsSb quantum well lasers.Japanese Journal of Applied Physics,56(5).
MLA	Li, X.,et al."Temperature- and current-dependent Spontaneous emission study on 2 m InGaSb/AlGaAsSb quantum well lasers".Japanese Journal of Applied Physics 56.5(2017).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Temperature and curr（1240KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载