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Design and Analysis of 2-mu m InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer
Li, X.; H. Wang; Z. L. Qiao; Y. Zhang; Z. C. Niu; C. Z. Tong and C. Y. Liu
2016
发表期刊Ieee Journal of Selected Topics in Quantum Electronics
卷号22期号:6
摘要On-orbit modulation transfer function (MTF) of the space camera usually contains the MTF with atmospheric effect, and therefore it does not objectively reflect the imaging performance of the space camera. Based on the relationship among the modulation depth of the object target, the object target before the entrance pupil of space camera and the image, a novel technique is proposed to exactly test the atmospheric MTF and the on-orbit MTF without atmospheric effect. The test results of a space camera with the above measuring technique indicate that the real time atmospheric MTF is 0.762, the on-orbit MTF with atmosphere effect is 0.177, and the on-orbit MTF without atmospheric effect is 0.232. The relative error between the MTF value measured in the laboratory and the on-orbit MTF without atmospheric effect is 4.7%. 2016, Chinese Lasers Press. All right reserved.
文章类型期刊
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57041
专题中科院长春光机所知识产出
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GB/T 7714
Li, X.,H. Wang,Z. L. Qiao,et al. Design and Analysis of 2-mu m InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer[J]. Ieee Journal of Selected Topics in Quantum Electronics,2016,22(6).
APA Li, X.,H. Wang,Z. L. Qiao,Y. Zhang,Z. C. Niu,&C. Z. Tong and C. Y. Liu.(2016).Design and Analysis of 2-mu m InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer.Ieee Journal of Selected Topics in Quantum Electronics,22(6).
MLA Li, X.,et al."Design and Analysis of 2-mu m InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer".Ieee Journal of Selected Topics in Quantum Electronics 22.6(2016).
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