Experiments and analysis of the two-step growth of InGaAs on GaAs substrate

	Experiments and analysis of the two-step growth of InGaAs on GaAs substrate
	Li, J. P.; G. Q. Miao; Z. W. Zhang and Y. G. Zeng
	2015
发表期刊	Crystengcomm
卷号	17 期号:30 页码:5808-5813
摘要	The two-step growth technique was introduced to solve the high lattice mismatch (5.6%) between In0.78Ga0.22As and GaAs substrate, and the mechanism of dislocation density reduction by a low-temperature buffer (LT-buffer) was investigated experimentally. For different thicknesses of LT-buffer layers, the surface morphology and microstructure were investigated, and the residual strain and dislocation density of the In0.78Ga0.22As epitaxial layer were studied by XRD, Raman spectroscopy and TEM. We proposed a mechanism explaining the dislocation density reduction during the two-step growth process by the LT-buffer. Also, the experimental results support our conclusion and verify the mechanism we presented.
收录类别	SCI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55307
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, J. P.,G. Q. Miao,Z. W. Zhang and Y. G. Zeng. Experiments and analysis of the two-step growth of InGaAs on GaAs substrate[J]. Crystengcomm,2015,17(30):5808-5813.
APA	Li, J. P.,G. Q. Miao,&Z. W. Zhang and Y. G. Zeng.(2015).Experiments and analysis of the two-step growth of InGaAs on GaAs substrate.Crystengcomm,17(30),5808-5813.
MLA	Li, J. P.,et al."Experiments and analysis of the two-step growth of InGaAs on GaAs substrate".Crystengcomm 17.30(2015):5808-5813.

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