Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process

	Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process
	Jiang, D. L.; L. Li; H. Y. Chen; H. Gao; Q. Qiao; Z. K. Xu and S. J. Jiao
	2015
发表期刊	Applied Physics Letters
卷号	106 期号:17 页码:5
摘要	A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure. (C) 2015 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55295
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang, D. L.,L. Li,H. Y. Chen,et al. Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process[J]. Applied Physics Letters,2015,106(17):5.
APA	Jiang, D. L.,L. Li,H. Y. Chen,H. Gao,Q. Qiao,&Z. K. Xu and S. J. Jiao.(2015).Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process.Applied Physics Letters,106(17),5.
MLA	Jiang, D. L.,et al."Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process".Applied Physics Letters 106.17(2015):5.

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