Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method | |
Feng, Q. J.; S. Liu; Y. Liu; H. F. Zhao; J. Y. Lu; K. Tang; R. Li; K. Xu and H. Y. Guo | |
2015 | |
发表期刊 | Materials Science in Semiconductor Processing |
卷号 | 29页码:188-192 |
摘要 | ZnO thin films with different Sb doping concentrations were prepared on n-GaN/Al2O3 substrates by simple chemical vapor deposition. Field emission scanning electron microscopy (FE-SEM) showed that the morphologies of ZnO thin films were rougher and the size of the crystal grains reduced with increasing Sb concentration. The X-ray diffraction measurements indicated that the (002) diffraction peak positions of samples shifted gradually towards the lower angle side, which explained the substitution of Sb3+ into the Zn site by Sb doping. In addition, Hall measurement results indicated that Sb doped ZnO thin films had p-type conductivity, and the optimal Sb2O3/ZnO mass ratio for p-type ZnO thin film was approximately 1:4. Optical absorption spectrum measurement indicated that the energy gaps of the samples were evidently narrowed with increasing Sb doping concentration. (C) 2014 Elsevier Ltd. All rights reserved. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55245 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Feng, Q. J.,S. Liu,Y. Liu,et al. Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method[J]. Materials Science in Semiconductor Processing,2015,29:188-192. |
APA | Feng, Q. J..,S. Liu.,Y. Liu.,H. F. Zhao.,J. Y. Lu.,...&K. Xu and H. Y. Guo.(2015).Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method.Materials Science in Semiconductor Processing,29,188-192. |
MLA | Feng, Q. J.,et al."Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method".Materials Science in Semiconductor Processing 29(2015):188-192. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Feng-2015-Influence (1165KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论