基于等离子体激发的氧化锌基深紫外发光器件研究

	基于等离子体激发的氧化锌基深紫外发光器件研究
	胡光冲
学位类型	硕士
导师	申德振 ; 单崇新
	2014-11
学位授予单位	中国科学院大学
学位专业	凝聚态物理
关键词	Mgzno 深紫外等离子体 Mocvd
摘要	发光波长在300 nm以内的光源在食品消毒、临床诊断等方面有重要的应用。可是目前主要的这类光源主要是以氙灯、汞灯等为主，它们一般工作寿命短、稳定性比较差。MgZnO 材料除了具备ZnO的高的激子结合能，环境友好，原料丰富等优势外，还具备带隙大范围可调等优点，作为发光材料时，发光波长很容易调节到300nm以内。这使其在深紫外波段的发光方面有巨大潜在应用。针对目前MgZnO深紫外发光器件的不足的存在的问题，本论文通过MOCVD技术和MBE技术制备了MgZnO发光器件，并对其发光特性做了研究，取得的成果如下：针对掺杂问题中随着禁带宽度增加而不断增长的受主激活能使有效p型掺杂越来越难等问题，本文利用等离子体激发立方相MgZnO实现了深紫外发光。首先利用金属气相化学沉积技术制备了禁带宽度5.47 eV的立方相MgZnO薄膜。当把样品放置于被高频强电场电离产生并加速的等离子体氛围中时，观测到了来自样品的276 nm的深紫外发光。研究表明发光源自于被高频强电场电离空气产生并加速的激发态粒子对样品的激发。
其他摘要	Deep ultraviolet (DUV) light source with wavelength shorter than 300nm plays an important role in food sterilization, water purification, clinical diagnostics and so on. However, the currently widely used DUV light sources are xenon lamps, mercury lamps, etc. It is accepted that the above DUV light sources suffer from short lifetime, poor stability and portability. DUV light sources fabricated from wide bandgap semiconductors offer the advantages of long lifetime, good stability and portability, thus much attention has been attracted in the past decades. MgZnO-based materials have large bandgap that can cover the DUV spectrum range. Also they have the advantages of large exciton binding energy, environment-friendly, rich in raw materials, etc. Because of the above characters, MgZnO has been considered an ideal candidate for DUV light sources. To realize efficient DUV light emission, p-n junctions are usually needed. Nevertheless, the p-type doping of such a wide bandgap is a huge challenge. Under such circumstance, plasma has been employed as the excitation source of the MgZnO films, and the main results obtained are as follows: Cubic rocksalt structured Mg0.54Zn0.46O ?lms have been prepared, and the ?lms show a wide bandgap of 5.4 eV. Obvious emission at around 276 nm has been detected when the ?lms are placed in the ambient of plasma, and the output power of the plasma induced DUV emission can reach around 56 μW, which is the highest value ever reported for ZnO-based DUV light-emitters. The deep ultraviolet emission is believed to come from the Mg0.54Zn0.46O ?lms excited by the kinetic radicals of the plasma.
语种	中文
文献类型	学位论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44656
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	胡光冲. 基于等离子体激发的氧化锌基深紫外发光器件研究[D]. 中国科学院大学,2014.

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