Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification

	Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification
	Zhang Z. Q.; Duan H. G.; Wu Y. H.; Zhou W. P.; Liu C.; Tang Y. G.; Li H. W.
	2014
发表期刊	Microelectronic Engineering
ISSN	ISBN/0167-9317
期号	128 页码:59-65
摘要	Hydrogen silsesquioxane (HSQ) is an excellent negative-tone resist for electron-beam lithography and sub-5-nm-half-pitch patterns can be achieved using high contrast development processes. However, the quality of HSQ adhesion on different types of substrates varies, thus limiting the function of HSQ in etching masks or metal lift-off process on various substrates. In this study, we proposed several chemical modification methods to improve HSQ adhesion resist onto Si, Cr, Cu, Mo, Au, and indium-tin oxide (ITO) substrates. HSQ adhesion patterns onto Au substrates was significantly improved by utilizing (3-mercaptopropyl) trimethoxysilane (MPTMS) and Poly (diallyldimethylammonium) chloride (PDDA) modifications. The (3-Aminopropyl) triethoxysilane (APTES) enhances the HSQ adhesion on Mo substrates. APTES and PDDA improve HSQ adhesion on Si, Cr, Cu and ITO. The improved adhesive HSQ nanopatterns on these substrates may benefit the fabrication of various nanophotonic and nanoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44071
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. Q.,Duan H. G.,Wu Y. H.,et al. Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification[J]. Microelectronic Engineering,2014(128):59-65.
APA	Zhang Z. Q..,Duan H. G..,Wu Y. H..,Zhou W. P..,Liu C..,...&Li H. W..(2014).Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification.Microelectronic Engineering(128),59-65.
MLA	Zhang Z. Q.,et al."Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification".Microelectronic Engineering .128(2014):59-65.

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