High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

	High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons
	Ni P. N.; Shan C. X.; Li B. H.; Shen D. Z.
	2014
发表期刊	Applied Physics Letters
ISSN	ISBN/0003-6951
卷号	104 期号:3 页码:4
摘要	High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1-xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg0.51Zn0.49O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors. (C) 2014 AIP Publishing LLC.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44025
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ni P. N.,Shan C. X.,Li B. H.,et al. High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons[J]. Applied Physics Letters,2014,104(3):4.
APA	Ni P. N.,Shan C. X.,Li B. H.,&Shen D. Z..(2014).High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons.Applied Physics Letters,104(3),4.
MLA	Ni P. N.,et al."High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons".Applied Physics Letters 104.3(2014):4.

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