Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation

	Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation
	Zhang N.; Hu Y.; Liu X.
	2013
发表期刊	Applied Physics Letters
ISSN	ISBN/00036951
期号	103
摘要	High-performance transparent organic thin film transistors using a WO 3/Ag/WO3 (WAW) multilayer as the source and drain electrodes have been developed without breaking the vacuum. The WAW electrodes were deposited by thermal evaporation at room temperature, leading to little damage to organic film. The optimized WAW electrode shows high transmittance (86.57%), low sheet resistance (11 /sq), and a high work function (5.0 eV). Consequently, we obtained high performance devices with mobility of 8.44 10-2 cm2/V·s, an on/off ratio of approximately 1.2 106, and an average visible range transmittance of 81.5%. 2013 AIP Publishing LLC.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40911
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang N.,Hu Y.,Liu X.. Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation[J]. Applied Physics Letters,2013(103).
APA	Zhang N.,Hu Y.,&Liu X..(2013).Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation.Applied Physics Letters(103).
MLA	Zhang N.,et al."Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation".Applied Physics Letters .103(2013).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Transparent organic （1072KB）			开放获取	CC BY-NC-ND	浏览下载