MgZnO p-n heterostructure light-emitting devices

	MgZnO p-n heterostructure light-emitting devices
	Liu J.-S.; Shan C.-X.; Li B.-H.; Zhang Z.-Z.; Liu K.-W.; Shen D.-Z.
	2013
发表期刊	Optics Letters
ISSN	ISBN/01469592
卷号	38 期号:12
摘要	MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg0.35Zn0.65O/n-Mg0.20Zn0.80O structures, and the p-type Mg0.35Zn0.65O film was realized using a lithium-nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg0.20Zn0.80O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge. 2013 Optical Society of America.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40750
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu J.-S.,Shan C.-X.,Li B.-H.,et al. MgZnO p-n heterostructure light-emitting devices[J]. Optics Letters,2013,38(12).
APA	Liu J.-S.,Shan C.-X.,Li B.-H.,Zhang Z.-Z.,Liu K.-W.,&Shen D.-Z..(2013).MgZnO p-n heterostructure light-emitting devices.Optics Letters,38(12).
MLA	Liu J.-S.,et al."MgZnO p-n heterostructure light-emitting devices".Optics Letters 38.12(2013).