Behavior of TiO2 thin film in a nanocapacitor

	Behavior of TiO2 thin film in a nanocapacitor
	Jia D. D.; Shaffer C.; Pickering S.; Goonewardene A.; Wang X. J.
	2008
发表期刊	Journal of Nanoscience and Nanotechnology
ISSN	1533-4880
卷号	8 期号:3 页码:1234-1237
摘要	Gold and platinum nanocapacitors have been fabricated using a magnetron sputtering technique. TiO2 is used as a dielectric material to separate the metal layers which act as the parallel plates for the capacitors. The thickness for metal films and TiO2 layer is 80 nm and 400 nm, respectively. Capacitance of the nanocapacitors has been measured and dielectric constant of TiO2 calculated. Both capacitance and dielectric constant are observed to have strong frequency dependence.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34318
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jia D. D.,Shaffer C.,Pickering S.,et al. Behavior of TiO2 thin film in a nanocapacitor[J]. Journal of Nanoscience and Nanotechnology,2008,8(3):1234-1237.
APA	Jia D. D.,Shaffer C.,Pickering S.,Goonewardene A.,&Wang X. J..(2008).Behavior of TiO2 thin film in a nanocapacitor.Journal of Nanoscience and Nanotechnology,8(3),1234-1237.
MLA	Jia D. D.,et al."Behavior of TiO2 thin film in a nanocapacitor".Journal of Nanoscience and Nanotechnology 8.3(2008):1234-1237.