Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots

	Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots
其他题名	论文其他题名
	Li S. W.; Koike K.
	2002
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	81 期号:19 页码:3594-3596
摘要	An attractive feature of vertically stacked InAs/AlGaAs quantum dots (QDs), which were buried in AlGaAs high potential barrier and spacer epilayer and grown by molecular-beam epitaxy with size-controlled growth, exhibits an unknown macroscopic quantum phenomenon (i.e., phase-change splitting of the ground state). In the vertically aligned QDs, due to many-body effect and quantum-mechanical renormalization, the electron ground state splits into a series of peaks of which the intensity gradually, systematically decreases to redshift direction with a wavelength constant. By the way, energy levels of electrons and holes might really be "seen" by deep level transient spectroscopy to which the photoluminescence experiment is in an excellent agreement. (C) 2002 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26856
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Koike K.. Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots[J]. Applied Physics Letters,2002,81(19):3594-3596.
APA	Li S. W.,&Koike K..(2002).Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots.Applied Physics Letters,81(19),3594-3596.
MLA	Li S. W.,et al."Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots".Applied Physics Letters 81.19(2002):3594-3596.

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