Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots | |
其他题名 | 论文其他题名 |
Li S. W.; Koike K. | |
2002 | |
发表期刊 | Applied Physics Letters |
ISSN | 0003-6951 |
卷号 | 81期号:19页码:3594-3596 |
摘要 | An attractive feature of vertically stacked InAs/AlGaAs quantum dots (QDs), which were buried in AlGaAs high potential barrier and spacer epilayer and grown by molecular-beam epitaxy with size-controlled growth, exhibits an unknown macroscopic quantum phenomenon (i.e., phase-change splitting of the ground state). In the vertically aligned QDs, due to many-body effect and quantum-mechanical renormalization, the electron ground state splits into a series of peaks of which the intensity gradually, systematically decreases to redshift direction with a wavelength constant. By the way, energy levels of electrons and holes might really be "seen" by deep level transient spectroscopy to which the photoluminescence experiment is in an excellent agreement. (C) 2002 American Institute of Physics. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26856 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li S. W.,Koike K.. Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots[J]. Applied Physics Letters,2002,81(19):3594-3596. |
APA | Li S. W.,&Koike K..(2002).Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots.Applied Physics Letters,81(19),3594-3596. |
MLA | Li S. W.,et al."Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots".Applied Physics Letters 81.19(2002):3594-3596. |
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