The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction

	The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction
其他题名	论文其他题名
	Guo Z.; Zhang H.; Zhao D. X.; Liu Y. C.; Yao B.; Li B. H.; Zhang Z. Z.; Shen D. Z.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:17
摘要	Under the ultralow driven current of 25 mu A an ultraviolet (UV)-blue electroluminescence (EL) with a weak defect-related emission could be obtained for the n type (n-) ZnO nanowires (NWs)/insulating (i-) polymer/p-type (p-) GaN light-emitting diode (LED). The i-MgO layer was also explored as a carrier blocking layer for the comparison. For the i-polymer inserted LED the EL emission peak was located at 400 nm, by analyzing the spectra it is believed that the emission includes several compound originations from both ZnO and GaN. The flexible carrier blocking layer, such as i- polymer, could effectively confine the radiative recombination zone. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505929]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26118
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo Z.,Zhang H.,Zhao D. X.,et al. The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction[J]. Applied Physics Letters,2010,97(17).
APA	Guo Z..,Zhang H..,Zhao D. X..,Liu Y. C..,Yao B..,...&Shen D. Z..(2010).The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction.Applied Physics Letters,97(17).
MLA	Guo Z.,et al."The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction".Applied Physics Letters 97.17(2010).

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