COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE

	COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE
其他题名	论文其他题名
	Hauksson I. S.; Simpson J.; Wang S. Y.; Prior K. A.; Cavenett B. C.
	1992
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	61 期号:18 页码:2208-2210
摘要	We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (V(Se)-Zn-N(Se)) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25494
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hauksson I. S.,Simpson J.,Wang S. Y.,et al. COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE[J]. Applied Physics Letters,1992,61(18):2208-2210.
APA	Hauksson I. S.,Simpson J.,Wang S. Y.,Prior K. A.,&Cavenett B. C..(1992).COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE.Applied Physics Letters,61(18),2208-2210.
MLA	Hauksson I. S.,et al."COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE".Applied Physics Letters 61.18(1992):2208-2210.