The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors

	The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors
其他题名	论文其他题名
	Tian Y. A.; Zhou T. M.; Zhang B. L.; Jiang H.; Jin Y. X.
	1999
发表期刊	Ieee Transactions on Electron Devices
ISSN	0018-9383
卷号	46 期号:4 页码:656-660
摘要	In this paper, the theoretical analysis of the Auger mechanism in n(+)-p GaInAsSb infrared photovoltaic detectors is reported, The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperature, and carrier concentration, We also analyze the effect of material parameters on the detectivity of the n(+)-p GaInAsSb detectors. The calculated results show that the Auger mechanism could be suppressed by optimizing the material parameters, so that the performance of GaInAsSb infrared photovoltaic detectors is improved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25313
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y. A.,Zhou T. M.,Zhang B. L.,et al. The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors[J]. Ieee Transactions on Electron Devices,1999,46(4):656-660.
APA	Tian Y. A.,Zhou T. M.,Zhang B. L.,Jiang H.,&Jin Y. X..(1999).The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors.Ieee Transactions on Electron Devices,46(4),656-660.
MLA	Tian Y. A.,et al."The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors".Ieee Transactions on Electron Devices 46.4(1999):656-660.

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