Changchun Institute of Optics,Fine Mechanics and Physics,CAS
The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors | |
其他题名 | 论文其他题名 |
Tian Y. A.; Zhou T. M.; Zhang B. L.; Jiang H.; Jin Y. X. | |
1999 | |
发表期刊 | Ieee Transactions on Electron Devices |
ISSN | 0018-9383 |
卷号 | 46期号:4页码:656-660 |
摘要 | In this paper, the theoretical analysis of the Auger mechanism in n(+)-p GaInAsSb infrared photovoltaic detectors is reported, The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperature, and carrier concentration, We also analyze the effect of material parameters on the detectivity of the n(+)-p GaInAsSb detectors. The calculated results show that the Auger mechanism could be suppressed by optimizing the material parameters, so that the performance of GaInAsSb infrared photovoltaic detectors is improved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25313 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Tian Y. A.,Zhou T. M.,Zhang B. L.,et al. The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors[J]. Ieee Transactions on Electron Devices,1999,46(4):656-660. |
APA | Tian Y. A.,Zhou T. M.,Zhang B. L.,Jiang H.,&Jin Y. X..(1999).The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors.Ieee Transactions on Electron Devices,46(4),656-660. |
MLA | Tian Y. A.,et al."The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors".Ieee Transactions on Electron Devices 46.4(1999):656-660. |
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