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High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain 期刊论文
IEEE Transactions on Electron Devices, 2022, 卷号: 69, 期号: 8, 页码: 4362-4365
作者:  Z. Zheng;  B. Qiao;  Z. Zhang;  X. Huang;  X. Xie;  B. Li;  X. Chen;  K. Liu;  L. Liu and D. Shen
浏览  |  Adobe PDF(4294Kb)  |  收藏  |  浏览/下载：41/24  |  提交时间：2023/06/14
Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity 期刊论文
Ieee Transactions on Electron Devices, 2022, 卷号: 69, 期号: 11, 页码: 6166-6170
作者:  Z. P. Liu;  C. S. Chu;  B. X. Wang;  G. S. Huang;  K. Jiang;  Y. H. Zhang;  X. J. Sun;  Z. H. Zhang and D. B. Li
浏览  |  Adobe PDF(1640Kb)  |  收藏  |  浏览/下载：72/32  |  提交时间：2023/06/14
Spatiotemporal Summation and Recognition Effects for a Dual-Emitter Light-Induced Neuromorphic Device 期刊论文
Ieee Transactions on Electron Devices, 2018, 卷号: 65, 期号: 1, 页码: 308-313
作者:  Yang, Y. C.;  Shi, Z.;  Zhu, B. C.;  Yuan, J. L.;  Zhu, G. X.;  Gao, X. M.;  Li, Y. H.;  Zhang, Z. Y.;  Liu, Y. H.;  Wang, Y. J.
浏览  |  Adobe PDF(2424Kb)  |  收藏  |  浏览/下载：291/93  |  提交时间：2019/09/17
Adding together behavior  dual emitter light-induced neuromorphic  device  excitatory postsynaptic voltage (EPSV)  InGaN  multiple-quantum-well diodes (MQW-diodes)  resonant summation effect  (RSE)  plasticity  synapse  transistor  Engineering  Physics  
Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material 期刊论文
Ieee Transactions on Electron Devices, 2016, 卷号: 63, 期号: 1
作者:  Sun, L.;  Y. Li;  Q. Ren;  W. L. Lv;  J. P. Zhang;  X. Luo;  F. Y. Zhao;  Z. Chen;  Z. W. Wen;  J. K. Zhong;  Y. Q. Peng and X. Y. Liu
浏览  |  Adobe PDF(1522Kb)  |  收藏  |  浏览/下载：308/91  |  提交时间：2017/09/11
The Design of Two-Step-Down Aging Test for LED Lamps Under Temperature Stress 期刊论文
Ieee Transactions on Electron Devices, 2016, 卷号: 63, 期号: 3
作者:  Hao, J.;  Q. Sun;  Z. J. Xu;  L. Jing;  Y. Wang and H. L. Ke
浏览  |  Adobe PDF(2301Kb)  |  收藏  |  浏览/下载：292/82  |  提交时间：2017/09/11
Simulation of pixel voltage error for a-Si TFT LCD regarding the change in LC pixel capacitance 期刊论文
Ieee Transactions on Electron Devices, 2001, 卷号: 48, 期号: 2, 页码: 218-221
作者:  Zhu Y. F.;  Li M. J.;  Yuan J. F.;  Liu C. Z.;  Yang B. L.;  Shen D. Z.
Adobe PDF(85Kb)  |  收藏  |  浏览/下载：555/149  |  提交时间：2012/10/21
Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors 期刊论文
Ieee Transactions on Electron Devices, 2000, 卷号: 47, 期号: 3, 页码: 544-552
作者:  Tian Y.;  Zhang B. L.;  Zhou T. M.;  Jiang H.;  Jin Y. X.
Adobe PDF(284Kb)  |  收藏  |  浏览/下载：431/98  |  提交时间：2012/10/21
The effect of auger mechanism on n(+)-p GaInAsSb infrared photovoltaic detectors 期刊论文
Ieee Transactions on Electron Devices, 1999, 卷号: 46, 期号: 4, 页码: 656-660
作者:  Tian Y. A.;  Zhou T. M.;  Zhang B. L.;  Jiang H.;  Jin Y. X.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：465/91  |  提交时间：2012/10/21