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  总访问量
 11825
  访问来源
    内部： 0
    外部： 11825
    国内： 11302
    国外： 523

  年访问量
 5460
  访问来源
    内部： 0
    外部： 5460
    国内： 5330
    国外： 130

  月访问量
 473
  访问来源
    内部： 0
    外部： 473
    国内： 450
    国外： 23

访问量

访问量

1. Enhanced solar-blind responsivity of photodetectors based on cubic.. [2903]
2. 电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压 [2704]
3. 非对称ZnO/ZnMgO双量子阱内量子效率的提高 [2612]
4. 电子束泵浦氧化锌基量子阱的斯塔克效应 [2579]
5. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors.. [2481]
6. Electrically pumped Fabry-Perot microlasers from single Ga-doped Z.. [2384]
7. MgZnO p-n heterostructure light-emitting devices [2348]
8. 基于立方相MgZnO薄膜的高响应度深紫外探测器 [2327]
9. N掺杂MgZnO薄膜的光电性质 [2257]
10. (CdZnTe,ZnSeTe)/ZnTe复合量子阱中的超快速激子衰减 [2163]
11. Controllable synthesis of silver nanoparticle aggregates for surfa.. [1061]
12. MSM结构ZnO紫外探测器的制备与性质 [973]
13. 低温外延生长平整ZnO薄膜 [965]
14. Photoconductive gain in solar-blind ultraviolet photodetector base.. [943]
15. 垂直氧化锌纳米线中的激射现象 [912]
16. 树形结构Si/ZnO纳米线阵列的制备及光学性能 [904]
17. Fe掺杂对CdS光学特性的影响 [902]
18. ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响 [902]
19. 退火处理对ZnO纳米线紫外探测器性能的改善 [900]
20. 太阳盲MgZnO光电探测器 [875]
21. 电极间距对ZnO基MSM紫外光电探测器性能的影响 [874]
22. 海胆状ZnO纳米线阵列的制备及其光学性能 [851]
23. 硼对氮掺杂的p型ZnO薄膜的影响 [843]
24. Control of N/N2 species ratio in NO plasma for p-type doping of Zn.. [831]
25. Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction .. [831]
26. 热处理对立方相结构Mg_(0.57)Zn_(0.43)O合金薄膜表面和组成的影响(英文.. [831]
27. Ultraviolet electroluminescence from ZnO-based heterojunction ligh.. [827]
28. The p-type ZnO film realized by a hydrothermal treatment method [826]
29. Evidence of cation vacancy induced room temperature ferromagnetism.. [824]
30. 通过交替生长气氛调控N掺杂ZnO薄膜电学特性 [806]
31. The surface defect-related electroluminescence from the ZnO microw.. [804]
32. 梯度组分缓冲层诱导的单一立方相Mg_(0.3)Zn_(0.7)O薄膜外延生长 [799]
33. m面蓝宝石上外延(110)取向立方MgZnO薄膜及其日盲紫外探测器件研究(英文.. [772]
34. Enhanced Efficiency of Polymer/ZnO Nanorods Hybrid Solar… [771]
35. Effect of compressive stress on stability of N-doped p-type ZnO [767]
36. Mg_xZn_(1-x)O单晶薄膜和MgZnO/ZnO异质结构的光学性质 [759]
37. Low-threshold electrically pumped ultraviolet laser diode [758]
38. 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性 [757]
39. 分子束外延方法生长p型氧化锌薄膜 [752]
40. Mg和Mn共掺的ZnO纳米薄膜的光学性质和磁性 [750]
41. Annealing effect on smoothness and composition of cubic-phase Mg0... [744]
42. 银修饰的ZnO纳米线的发光和光响应性质 [739]
43. ZnO/Ag/ZnO多层结构薄膜的光电性质 [738]
44. 退火对富硅氮化硅薄膜的结构和发光的影响 [725]
45. ZnO纳米线紫外探测器的制备和快速响应性能的研究 [718]
46. Deep-ultraviolet light-emitting device realized via a hole-multipl.. [716]
47. ZnCdSe量子点的MOCVD生长及其演变 [712]
48. Surface reconstruction of ZnO nanowire arrays via solvent-evaporat.. [710]
49. Dual-color ultraviolet photodetector based on mixed-phaseMgZnO/i-M.. [709]
50. Zn_(1-x)Cd_xS合金薄膜的结构和光学性质 [702]
51. 富硅量不同的富硅氮化硅薄膜的光致发光研究 [702]
52. ZnCdSe量子阱_CdSe量子点耦合结构中的激子复合 [696]
53. 在蓝宝石衬底上生长的氧化锌p-n同质结发光二极管 [686]
54. Gold nanoparticles modified ZnO nanorods with improved photocataly.. [678]
55. LP-MOCVD生长(ZnCdTe,ZnSeTe)/ZnTe复合量子阱的激子发光研究 [675]
56. DNA-based fabrication of density-controlled vertically aligned ZnO.. [673]
57. The lasing action observed in aligned ZnO nanowires [665]
58. 热处理对立方相结构Mg0.57Zn0.43O合金薄膜表面和组成的影响 [650]
59. ZnO-Si不同退火条件对生长ZnSe薄膜的影响 [650]
60. Mg含量对Mg_xZn_(1-x)O∶Ga薄膜电学性质的影响 [646]
61. _CdZnTe_ZnSeTe_ZnTe复合量子阱中激子隧穿过程 [623]
62. A reproducible route to p-ZnO films and their application in light.. [619]
63. 垂直氧化锌纳米线中的激射现象(英文) [613]
64. 包埋于氮化硅薄膜中的硅团簇的光致发光特性 [612]
65. The growth and the ultraviolet photoresponse properties… [611]
66. ZnCdSe量子点的激子行为研究 [609]
67. Ga掺入对立方相MgZnO薄膜晶体结构的影响 [608]
68. The substrate effect on the optical band gap of the Mg0.53Zn0.47O .. [595]
69. Doping efficiency, optical and electrical properties of nitrogen-d.. [568]
70. Si衬底上ZnSe外延膜的低压MOCVD生长 [565]
71. 氧化锌基材料、异质结构及光电器件 [559]
72. 点缺陷调控:宽禁带Ⅱ族氧化物半导体的机遇与挑战 [559]
73. Controlled growth of pure cubic Mg0.3Zn0.7O thin films on c-plane .. [551]
74. Effect of boron on nitrogen doped p-type ZnO thin films [547]
75. ZnO-based matierial, heterojunction and photoelctronic device [530]
76. Enhancement of a Cu2O/ZnO photodetector via surface plasmon resona.. [529]
77. Effect of electrode spacing on the properties of ZnO based MSM ult.. [379]
78. Epitaxial (110)-oriented cubic MgZnO films on m-plane sapphire for.. [374]
79. p-type doping of ZnO:N thin fims by alternating the growth atmosph.. [344]
80. Smooth surface morphology of ZnO thin films on sapphire at low tem.. [330]
81. Study of Ga-doping effect on the structure of cubic MgZnO [290]
82. 衬底温度对Cd_xZn_(1-x)Te外延层中Cd组分含量的影响 [189]
83. V-W模式ZnSeS量子点的生长 [186]
84. 等离子体协助的ZnS:Mn外延层生长及其电致发光 [151]
85. ZnO覆盖的Si衬底上ZnCdTe-ZnTe量子阱的生长 [144]

下载量

1. 电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压 [2002]
2. 非对称ZnO/ZnMgO双量子阱内量子效率的提高 [1903]
3. Enhanced solar-blind responsivity of photodetectors based on cubic.. [1899]
4. N掺杂MgZnO薄膜的光电性质 [1790]
5. 电子束泵浦氧化锌基量子阱的斯塔克效应 [1770]
6. 基于立方相MgZnO薄膜的高响应度深紫外探测器 [1736]
7. MgZnO p-n heterostructure light-emitting devices [1730]
8. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors.. [1618]
9. (CdZnTe,ZnSeTe)/ZnTe复合量子阱中的超快速激子衰减 [1609]
10. Electrically pumped Fabry-Perot microlasers from single Ga-doped Z.. [1500]
11. 硼对氮掺杂的p型ZnO薄膜的影响 [364]
12. Fe掺杂对CdS光学特性的影响 [328]
13. 电极间距对ZnO基MSM紫外光电探测器性能的影响 [327]
14. MSM结构ZnO紫外探测器的制备与性质 [314]
15. 退火处理对ZnO纳米线紫外探测器性能的改善 [309]
16. 树形结构Si/ZnO纳米线阵列的制备及光学性能 [297]
17. 低温外延生长平整ZnO薄膜 [281]
18. 分子束外延方法生长p型氧化锌薄膜 [267]
19. 海胆状ZnO纳米线阵列的制备及其光学性能 [260]
20. Controllable synthesis of silver nanoparticle aggregates for surfa.. [248]
21. 退火对富硅氮化硅薄膜的结构和发光的影响 [247]
22. 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性 [244]
23. Enhanced Efficiency of Polymer/ZnO Nanorods Hybrid Solar… [241]
24. ZnO/Ag/ZnO多层结构薄膜的光电性质 [240]
25. Low-threshold electrically pumped ultraviolet laser diode [240]
26. 梯度组分缓冲层诱导的单一立方相Mg_(0.3)Zn_(0.7)O薄膜外延生长 [240]
27. Photoconductive gain in solar-blind ultraviolet photodetector base.. [238]
28. 通过交替生长气氛调控N掺杂ZnO薄膜电学特性 [231]
29. Evidence of cation vacancy induced room temperature ferromagnetism.. [228]
30. 银修饰的ZnO纳米线的发光和光响应性质 [227]
31. Gold nanoparticles modified ZnO nanorods with improved photocataly.. [226]
32. Effect of compressive stress on stability of N-doped p-type ZnO [223]
33. Dual-color ultraviolet photodetector based on mixed-phaseMgZnO/i-M.. [223]
34. DNA-based fabrication of density-controlled vertically aligned ZnO.. [220]
35. Mg含量对Mg_xZn_(1-x)O∶Ga薄膜电学性质的影响 [220]
36. Annealing effect on smoothness and composition of cubic-phase Mg0... [218]
37. 热处理对立方相结构Mg_(0.57)Zn_(0.43)O合金薄膜表面和组成的影响(英文.. [217]
38. 太阳盲MgZnO光电探测器 [213]
39. m面蓝宝石上外延(110)取向立方MgZnO薄膜及其日盲紫外探测器件研究(英文.. [211]
40. Deep-ultraviolet light-emitting device realized via a hole-multipl.. [209]
41. Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction .. [206]
42. The p-type ZnO film realized by a hydrothermal treatment method [204]
43. The surface defect-related electroluminescence from the ZnO microw.. [203]
44. Ga掺入对立方相MgZnO薄膜晶体结构的影响 [202]
45. 在蓝宝石衬底上生长的氧化锌p-n同质结发光二极管 [201]
46. ZnCdSe量子阱_CdSe量子点耦合结构中的激子复合 [193]
47. The substrate effect on the optical band gap of the Mg0.53Zn0.47O .. [191]
48. Surface reconstruction of ZnO nanowire arrays via solvent-evaporat.. [188]
49. Zn_(1-x)Cd_xS合金薄膜的结构和光学性质 [188]
50. LP-MOCVD生长(ZnCdTe,ZnSeTe)/ZnTe复合量子阱的激子发光研究 [178]
51. 富硅量不同的富硅氮化硅薄膜的光致发光研究 [175]
52. Ultraviolet electroluminescence from ZnO-based heterojunction ligh.. [173]
53. ZnCdSe量子点的MOCVD生长及其演变 [173]
54. The growth and the ultraviolet photoresponse properties… [171]
55. Mg_xZn_(1-x)O单晶薄膜和MgZnO/ZnO异质结构的光学性质 [171]
56. A reproducible route to p-ZnO films and their application in light.. [169]
57. ZnO纳米线紫外探测器的制备和快速响应性能的研究 [166]
58. _CdZnTe_ZnSeTe_ZnTe复合量子阱中激子隧穿过程 [163]
59. Mg和Mn共掺的ZnO纳米薄膜的光学性质和磁性 [160]
60. ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响 [160]
61. Control of N/N2 species ratio in NO plasma for p-type doping of Zn.. [158]
62. ZnO-Si不同退火条件对生长ZnSe薄膜的影响 [155]
63. 包埋于氮化硅薄膜中的硅团簇的光致发光特性 [154]
64. ZnCdSe量子点的激子行为研究 [144]
65. 垂直氧化锌纳米线中的激射现象(英文) [141]
66. The lasing action observed in aligned ZnO nanowires [140]
67. 点缺陷调控:宽禁带Ⅱ族氧化物半导体的机遇与挑战 [136]
68. 垂直氧化锌纳米线中的激射现象 [135]
69. Effect of boron on nitrogen doped p-type ZnO thin films [133]
70. Si衬底上ZnSe外延膜的低压MOCVD生长 [132]
71. 热处理对立方相结构Mg0.57Zn0.43O合金薄膜表面和组成的影响 [123]
72. 氧化锌基材料、异质结构及光电器件 [116]
73. Controlled growth of pure cubic Mg0.3Zn0.7O thin films on c-plane .. [103]
74. Effect of electrode spacing on the properties of ZnO based MSM ult.. [85]
75. ZnO-based matierial, heterojunction and photoelctronic device [81]
76. Doping efficiency, optical and electrical properties of nitrogen-d.. [64]