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  总访问量
 14672
  访问来源
    内部： 3
    外部： 14669
    国内： 14006
    国外： 666

  年访问量
 7546
  访问来源
    内部： 0
    外部： 7546
    国内： 7350
    国外： 196

  月访问量
 1168
  访问来源
    内部： 0
    外部： 1168
    国内： 1133
    国外： 35

访问量

访问量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2659]
2. Long lifetime pure organic phosphorescence based on water soluble .. [2616]
3. GaAs微尖上碳纳米管的制备 [2379]
4. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [2344]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [2068]
6. Enhancement of optical properties and donor-related emissions in Y.. [1464]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1433]
8. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1188]
9. Effect of buffer layer thickness and epilayer growth temperature o.. [1146]
10. Influence of buffer layer thickness and epilayer's growth temperat.. [1132]
11. Field emission from single diamond particle [1119]
12. AlN插入层对a-AlGaN的外延生长的影响(英文) [1113]
13. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [1102]
14. High performance back-illuminated MIS structure AlGaN solar-blind .. [1097]
15. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1083]
16. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [1043]
17. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1028]
18. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1022]
19. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [1017]
20. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1003]
21. 碳纳米管场发射阴极的制备及其场发射特性 [999]
22. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [996]
23. Effect of trimethyl-aluminum preflow on the structure and strain p.. [981]
24. 初始化生长条件对a-GaN中应变的影响 [979]
25. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [962]
26. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [958]
27. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [949]
28. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [914]
29. Effect of buffer layer annealing temperature on the crystalline qu.. [910]
30. GaN基MIS紫外探测器的电学及光电特性 [896]
31. Upconversion luminescence, intensity saturation effect, and therma.. [889]
32. Visualization and investigation of Si-C covalent bonding of single.. [887]
33. Improved field emission performance of carbon nanotube by introduc.. [880]
34. Influence of oxygen on photoluminescence of erbium-implanted silic.. [869]
35. Influence of thermal annealing duration of buffer layer on the cry.. [868]
36. Influence of buffer layer thickness and epilayer's growth temperat.. [868]
37. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [862]
38. Valence band offset of GaN/diamond heterojunction measured… [856]
39. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [851]
40. Growth and optical properties of catalyst-free InP nanowires on Si.. [850]
41. Annealing effect on the bipolar resistive switching characteristic.. [841]
42. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [834]
43. Effect of buffer growth temperature on crystalline quality and opt.. [831]
44. Influence of threading dislocations on GaN-based metal-semiconduct.. [830]
45. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [826]
46. Effect of distribution of field enhancement factor on field emissi.. [817]
47. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [815]
48. Investigation on growth related aspects of catalyst-free InP nanow.. [814]
49. Influence of threading dislocations on GaN-based metal… [809]
50. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [808]
51. 俄歇复合对同质结InGaAs探测器探测率的影响 [807]
52. 新形貌二氧化硅材料的制备及光学性质研究 [807]
53. Effect of GaN buffer layers on deposition of AlN films by DC react.. [804]
54. Effect of buffer layer annealing temperature on the crystalline qu.. [802]
55. Effect of interface barrier between carbon nanotube film and subst.. [797]
56. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [795]
57. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [787]
58. Electrophoretic deposition and field emission properties of patter.. [780]
59. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [779]
60. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [776]
61. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
62. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [765]
63. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [761]
64. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [760]
65. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [759]
66. Electrophoresis deposition and field emission characteristics of p.. [754]
67. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [753]
68. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [751]
69. Study of AlN films doped by Si thermal diffusion [751]
70. Controllable synthesis, growth mechanism and optical properties of.. [748]
71. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [744]
72. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [744]
73. 电泳和电镀法增强碳纳米管场发射特性的研究 [742]
74. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [742]
75. An aluminum nitride photoconductor for X-ray detection [730]
76. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [727]
77. Si衬底上InP纳米线的晶体结构和光学性质 [722]
78. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [720]
79. Growth of diamond on silicon tips [713]
80. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [712]
81. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [711]
82. A study of two-step growth and properties of In0.82Ga0.18As on InP [709]
83. Current-voltage and electron emission characteristics of diamond p.. [704]
84. Influence of the growth temperature of AlN nucleation layer on AlN.. [693]
85. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [686]
86. Effect of In content of the buffer layer on crystalline quality an.. [682]
87. HFCVD法制备SiC材料及室温光致发光 [682]
88. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emissio.. [681]
89. Improved field emission characteristic of carbon nanotubes by an A.. [675]
90. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [672]
91. 单颗粒CVD金刚石的场发射 [666]
92. Targeted delivery system based on magnetic mesoporous silica nanoc.. [665]
93. Influence of thermal annealing duration of buffer layer on the cry.. [661]
94. Near-infrared InGaAs FPAs for space applications [659]
95. n型硅微尖场发射电子能谱的模拟计算 [654]
96. SiC/SiO2 core-shell nanowires with different shapes: Synthesis and.. [654]
97. Zinc oxide nanotubes decorated with silver nanoparticles as an ult.. [648]
98. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
99. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [647]
100. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [641]

下载量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2095]
2. Long lifetime pure organic phosphorescence based on water soluble .. [2081]
3. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [1794]
4. GaAs微尖上碳纳米管的制备 [1772]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [1766]
6. Enhancement of optical properties and donor-related emissions in Y.. [402]
7. Improved field emission performance of carbon nanotube by introduc.. [355]
8. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [350]
9. Upconversion luminescence, intensity saturation effect, and therma.. [334]
10. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [330]
11. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [311]
12. 碳纳米管场发射阴极的制备及其场发射特性 [306]
13. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [294]
14. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [293]
15. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [293]
16. AlN插入层对a-AlGaN的外延生长的影响(英文) [289]
17. High performance back-illuminated MIS structure AlGaN solar-blind .. [285]
18. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [282]
19. Influence of threading dislocations on GaN-based metal-semiconduct.. [280]
20. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [272]
21. 初始化生长条件对a-GaN中应变的影响 [272]
22. Investigation on growth related aspects of catalyst-free InP nanow.. [271]
23. Annealing effect on the bipolar resistive switching characteristic.. [270]
24. 氮化铝薄膜的硅热扩散掺杂研究(英文) [267]
25. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [264]
26. Effect of buffer layer annealing temperature on the crystalline qu.. [261]
27. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [261]
28. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [260]
29. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [259]
30. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [258]
31. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [257]
32. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [254]
33. Effect of buffer growth temperature on crystalline quality and opt.. [253]
34. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [252]
35. Effect of trimethyl-aluminum preflow on the structure and strain p.. [250]
36. Electrophoretic deposition and field emission properties of patter.. [248]
37. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [247]
38. Influence of the growth temperature of AlN nucleation layer on AlN.. [245]
39. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [244]
40. Influence of buffer layer thickness and epilayer's growth temperat.. [243]
41. GaN基MIS紫外探测器的电学及光电特性 [238]
42. Effect of buffer layer annealing temperature on the crystalline qu.. [237]
43. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [237]
44. 新形貌二氧化硅材料的制备及光学性质研究 [229]
45. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [228]
46. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [227]
47. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [226]
48. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [225]
49. Influence of buffer layer thickness and epilayer's growth temperat.. [224]
50. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [223]
51. Effect of buffer layer thickness and epilayer growth temperature o.. [223]
52. Field emission from single diamond particle [222]
53. Growth and optical properties of catalyst-free InP nanowires on Si.. [222]
54. Effect of interface barrier between carbon nanotube film and subst.. [222]
55. HFCVD法制备SiC材料及室温光致发光 [219]
56. Influence of threading dislocations on GaN-based metal… [214]
57. 俄歇复合对同质结InGaAs探测器探测率的影响 [207]
58. Valence band offset of GaN/diamond heterojunction measured… [205]
59. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [205]
60. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [204]
61. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [203]
62. n型硅微尖场发射电子能谱的模拟计算 [203]
63. 电泳和电镀法增强碳纳米管场发射特性的研究 [203]
64. Visualization and investigation of Si-C covalent bonding of single.. [202]
65. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
66. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [201]
67. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [200]
68. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [200]
69. Current-voltage and electron emission characteristics of diamond p.. [198]
70. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [197]
71. Controllable synthesis, growth mechanism and optical properties of.. [197]
72. InGaAs近红外线列焦面阵的研制进展 [194]
73. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [192]
74. Electrophoresis deposition and field emission characteristics of p.. [191]
75. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [190]
76. 图形化的衬底电极改善碳纳米管的场发射特性 [187]
77. SiC纳米颗粒的制备与发光特性研究 [184]
78. Influence of thermal annealing duration of buffer layer on the cry.. [183]
79. Effect of GaN buffer layers on deposition of AlN films by DC react.. [183]
80. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [181]
81. Less contribution of nonradiative recombination in ZnO nails compa.. [180]
82. A study of two-step growth and properties of In0.82Ga0.18As on InP [179]
83. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [178]
84. An aluminum nitride photoconductor for X-ray detection [174]
85. Targeted delivery system based on magnetic mesoporous silica nanoc.. [173]
86. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [173]
87. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [171]
88. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [168]
89. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [166]
90. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [166]
91. 单颗粒CVD金刚石的场发射 [165]
92. Improve the open-circuit voltage of ZnO solar cells with inserting.. [163]
93. Effect of In content of the buffer layer on crystalline quality an.. [161]
94. In situ observation of two-step growth of AlN on sapphire using hi.. [157]
95. 以碳纳米管阵列为场致发射阴极的X射线源研究 [156]
96. Near-infrared InGaAs FPAs for space applications [155]
97. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [153]
98. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [153]
99. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [152]
100. Influence of thermal annealing duration of buffer layer on the cry.. [151]