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  总访问量
 19193
  访问来源
    内部： 3
    外部： 19190
    国内： 18292
    国外： 901

  年访问量
 12067
  访问来源
    内部： 0
    外部： 12067
    国内： 11636
    国外： 431

  月访问量
 1868
  访问来源
    内部： 0
    外部： 1868
    国内： 1769
    国外： 99

访问量

访问量

1. Long lifetime pure organic phosphorescence based on water soluble .. [2973]
2. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2933]
3. GaAs微尖上碳纳米管的制备 [2664]
4. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [2580]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [2309]
6. Enhancement of optical properties and donor-related emissions in Y.. [1466]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1444]
8. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1195]
9. Effect of buffer layer thickness and epilayer growth temperature o.. [1149]
10. Influence of buffer layer thickness and epilayer's growth temperat.. [1134]
11. Field emission from single diamond particle [1129]
12. AlN插入层对a-AlGaN的外延生长的影响(英文) [1118]
13. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [1108]
14. High performance back-illuminated MIS structure AlGaN solar-blind .. [1106]
15. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1085]
16. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [1052]
17. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1035]
18. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1027]
19. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [1022]
20. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1009]
21. 碳纳米管场发射阴极的制备及其场发射特性 [1007]
22. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1002]
23. Effect of trimethyl-aluminum preflow on the structure and strain p.. [991]
24. 初始化生长条件对a-GaN中应变的影响 [988]
25. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [970]
26. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [964]
27. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [954]
28. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [920]
29. Effect of buffer layer annealing temperature on the crystalline qu.. [913]
30. GaN基MIS紫外探测器的电学及光电特性 [900]
31. Upconversion luminescence, intensity saturation effect, and therma.. [897]
32. Visualization and investigation of Si-C covalent bonding of single.. [891]
33. Improved field emission performance of carbon nanotube by introduc.. [885]
34. Influence of thermal annealing duration of buffer layer on the cry.. [878]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [875]
36. 新形貌二氧化硅材料的制备及光学性质研究 [875]
37. Influence of oxygen on photoluminescence of erbium-implanted silic.. [869]
38. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [867]
39. Growth and optical properties of catalyst-free InP nanowires on Si.. [860]
40. Valence band offset of GaN/diamond heterojunction measured… [857]
41. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [851]
42. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [845]
43. Annealing effect on the bipolar resistive switching characteristic.. [845]
44. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [839]
45. Effect of buffer growth temperature on crystalline quality and opt.. [836]
46. Influence of threading dislocations on GaN-based metal-semiconduct.. [832]
47. Effect of distribution of field enhancement factor on field emissi.. [820]
48. Investigation on growth related aspects of catalyst-free InP nanow.. [818]
49. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [817]
50. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [817]
51. Influence of threading dislocations on GaN-based metal… [815]
52. 俄歇复合对同质结InGaAs探测器探测率的影响 [810]
53. Effect of GaN buffer layers on deposition of AlN films by DC react.. [807]
54. Effect of buffer layer annealing temperature on the crystalline qu.. [805]
55. Effect of interface barrier between carbon nanotube film and subst.. [804]
56. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [797]
57. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [793]
58. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [788]
59. Electrophoretic deposition and field emission properties of patter.. [782]
60. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [781]
61. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [772]
62. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [770]
63. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [768]
64. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
65. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [766]
66. Electrophoresis deposition and field emission characteristics of p.. [764]
67. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [761]
68. Study of AlN films doped by Si thermal diffusion [758]
69. Controllable synthesis, growth mechanism and optical properties of.. [755]
70. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [751]
71. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [751]
72. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [751]
73. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [750]
74. 电泳和电镀法增强碳纳米管场发射特性的研究 [746]
75. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [743]
76. An aluminum nitride photoconductor for X-ray detection [741]
77. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [733]
78. Si衬底上InP纳米线的晶体结构和光学性质 [725]
79. Growth of diamond on silicon tips [723]
80. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [717]
81. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [717]
82. A study of two-step growth and properties of In0.82Ga0.18As on InP [711]
83. Current-voltage and electron emission characteristics of diamond p.. [707]
84. Influence of the growth temperature of AlN nucleation layer on AlN.. [700]
85. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [695]
86. Effect of In content of the buffer layer on crystalline quality an.. [691]
87. HFCVD法制备SiC材料及室温光致发光 [688]
88. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emissio.. [683]
89. Improved field emission characteristic of carbon nanotubes by an A.. [680]
90. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [677]
91. Near-infrared InGaAs FPAs for space applications [676]
92. 单颗粒CVD金刚石的场发射 [675]
93. Influence of thermal annealing duration of buffer layer on the cry.. [666]
94. Targeted delivery system based on magnetic mesoporous silica nanoc.. [666]
95. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [658]
96. n型硅微尖场发射电子能谱的模拟计算 [656]
97. SiC/SiO2 core-shell nanowires with different shapes: Synthesis and.. [654]
98. Zinc oxide nanotubes decorated with silver nanoparticles as an ult.. [648]
99. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
100. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [645]

下载量

1. Long lifetime pure organic phosphorescence based on water soluble .. [2438]
2. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2369]
3. GaAs微尖上碳纳米管的制备 [2057]
4. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [2030]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [2007]
6. Enhancement of optical properties and donor-related emissions in Y.. [404]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [361]
8. Improved field emission performance of carbon nanotube by introduc.. [360]
9. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [349]
10. Upconversion luminescence, intensity saturation effect, and therma.. [342]
11. 碳纳米管场发射阴极的制备及其场发射特性 [314]
12. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [313]
13. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [304]
14. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [300]
15. 新形貌二氧化硅材料的制备及光学性质研究 [297]
16. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [295]
17. AlN插入层对a-AlGaN的外延生长的影响(英文) [294]
18. High performance back-illuminated MIS structure AlGaN solar-blind .. [294]
19. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [288]
20. Influence of threading dislocations on GaN-based metal-semiconduct.. [282]
21. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [282]
22. 初始化生长条件对a-GaN中应变的影响 [281]
23. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [278]
24. Investigation on growth related aspects of catalyst-free InP nanow.. [275]
25. Annealing effect on the bipolar resistive switching characteristic.. [274]
26. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [273]
27. 氮化铝薄膜的硅热扩散掺杂研究(英文) [272]
28. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [272]
29. Effect of buffer layer annealing temperature on the crystalline qu.. [264]
30. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [263]
31. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [262]
32. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [261]
33. Effect of trimethyl-aluminum preflow on the structure and strain p.. [260]
34. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [260]
35. Effect of buffer growth temperature on crystalline quality and opt.. [258]
36. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [257]
37. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [252]
38. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [251]
39. Influence of the growth temperature of AlN nucleation layer on AlN.. [251]
40. Influence of buffer layer thickness and epilayer's growth temperat.. [250]
41. Electrophoretic deposition and field emission properties of patter.. [250]
42. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [246]
43. GaN基MIS紫外探测器的电学及光电特性 [242]
44. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [240]
45. Effect of buffer layer annealing temperature on the crystalline qu.. [240]
46. SiC纳米颗粒的制备与发光特性研究 [238]
47. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [234]
48. Field emission from single diamond particle [232]
49. Growth and optical properties of catalyst-free InP nanowires on Si.. [232]
50. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [231]
51. Effect of interface barrier between carbon nanotube film and subst.. [229]
52. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [228]
53. Influence of buffer layer thickness and epilayer's growth temperat.. [226]
54. Effect of buffer layer thickness and epilayer growth temperature o.. [226]
55. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [225]
56. HFCVD法制备SiC材料及室温光致发光 [225]
57. Influence of threading dislocations on GaN-based metal… [220]
58. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [213]
59. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [212]
60. 俄歇复合对同质结InGaAs探测器探测率的影响 [210]
61. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [209]
62. 电泳和电镀法增强碳纳米管场发射特性的研究 [207]
63. Valence band offset of GaN/diamond heterojunction measured… [206]
64. Visualization and investigation of Si-C covalent bonding of single.. [206]
65. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [206]
66. n型硅微尖场发射电子能谱的模拟计算 [205]
67. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [205]
68. Controllable synthesis, growth mechanism and optical properties of.. [204]
69. InGaAs近红外线列焦面阵的研制进展 [203]
70. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [203]
71. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [203]
72. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
73. Electrophoresis deposition and field emission characteristics of p.. [201]
74. Current-voltage and electron emission characteristics of diamond p.. [201]
75. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [199]
76. Influence of thermal annealing duration of buffer layer on the cry.. [193]
77. 图形化的衬底电极改善碳纳米管的场发射特性 [191]
78. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [191]
79. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [187]
80. Effect of GaN buffer layers on deposition of AlN films by DC react.. [186]
81. An aluminum nitride photoconductor for X-ray detection [185]
82. Less contribution of nonradiative recombination in ZnO nails compa.. [185]
83. A study of two-step growth and properties of In0.82Ga0.18As on InP [181]
84. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [180]
85. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [180]
86. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [177]
87. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [175]
88. 单颗粒CVD金刚石的场发射 [174]
89. Targeted delivery system based on magnetic mesoporous silica nanoc.. [174]
90. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [173]
91. Near-infrared InGaAs FPAs for space applications [172]
92. In situ observation of two-step growth of AlN on sapphire using hi.. [172]
93. Effect of In content of the buffer layer on crystalline quality an.. [170]
94. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [169]
95. 以碳纳米管阵列为场致发射阴极的X射线源研究 [167]
96. Improve the open-circuit voltage of ZnO solar cells with inserting.. [164]
97. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [162]
98. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [160]
99. Growth of diamond on silicon tips [159]
100. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [156]