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  总访问量
 12516
  访问来源
    内部： 3
    外部： 12513
    国内： 11944
    国外： 572

  年访问量
 5390
  访问来源
    内部： 0
    外部： 5390
    国内： 5288
    国外： 102

  月访问量
 712
  访问来源
    内部： 0
    外部： 712
    国内： 663
    国外： 49

访问量

访问量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2374]
2. Long lifetime pure organic phosphorescence based on water soluble .. [2302]
3. GaAs微尖上碳纳米管的制备 [2170]
4. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [2134]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [1845]
6. Enhancement of optical properties and donor-related emissions in Y.. [1458]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1428]
8. 平板玻璃电真空显示器件的消气方法 (发明) [1358]
9. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1187]
10. Effect of buffer layer thickness and epilayer growth temperature o.. [1140]
11. 带有消气装置的平板玻璃电真空显示器件 (实用新型) [1129]
12. Influence of buffer layer thickness and epilayer's growth temperat.. [1127]
13. Field emission from single diamond particle [1115]
14. AlN插入层对a-AlGaN的外延生长的影响(英文) [1106]
15. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [1093]
16. High performance back-illuminated MIS structure AlGaN solar-blind .. [1086]
17. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1079]
18. 气体微水监测方法及装置 (发明) [1054]
19. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [1038]
20. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1024]
21. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1016]
22. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [1013]
23. 碳纳米管场发射阴极的制备及其场发射特性 [996]
24. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [988]
25. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [983]
26. Effect of trimethyl-aluminum preflow on the structure and strain p.. [976]
27. 初始化生长条件对a-GaN中应变的影响 [974]
28. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [957]
29. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [954]
30. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [945]
31. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [911]
32. Effect of buffer layer annealing temperature on the crystalline qu.. [900]
33. GaN基MIS紫外探测器的电学及光电特性 [893]
34. 一种场发射显示器件中阳极屏的制备方法 (发明) [889]
35. Upconversion luminescence, intensity saturation effect, and therma.. [888]
36. Visualization and investigation of Si-C covalent bonding of single.. [880]
37. Improved field emission performance of carbon nanotube by introduc.. [872]
38. Influence of oxygen on photoluminescence of erbium-implanted silic.. [869]
39. Influence of buffer layer thickness and epilayer's growth temperat.. [866]
40. Influence of thermal annealing duration of buffer layer on the cry.. [863]
41. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [854]
42. Valence band offset of GaN/diamond heterojunction measured… [851]
43. Growth and optical properties of catalyst-free InP nanowires on Si.. [849]
44. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [848]
45. Annealing effect on the bipolar resistive switching characteristic.. [830]
46. Effect of buffer growth temperature on crystalline quality and opt.. [827]
47. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [827]
48. Influence of threading dislocations on GaN-based metal-semiconduct.. [826]
49. Effect of distribution of field enhancement factor on field emissi.. [815]
50. Investigation on growth related aspects of catalyst-free InP nanow.. [811]
51. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [808]
52. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [808]
53. Influence of threading dislocations on GaN-based metal… [805]
54. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [804]
55. 俄歇复合对同质结InGaAs探测器探测率的影响 [803]
56. Effect of GaN buffer layers on deposition of AlN films by DC react.. [803]
57. Effect of buffer layer annealing temperature on the crystalline qu.. [801]
58. Effect of interface barrier between carbon nanotube film and subst.. [797]
59. 新形貌二氧化硅材料的制备及光学性质研究 [794]
60. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [792]
61. 一种制备倒梯形光刻胶截面的方法 (发明) [779]
62. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [779]
63. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [778]
64. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [776]
65. Electrophoretic deposition and field emission properties of patter.. [774]
66. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [772]
67. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [769]
68. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
69. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [766]
70. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [762]
71. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [761]
72. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [761]
73. 一种选域金刚石膜的制备方法 (发明) [757]
74. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [756]
75. Electrophoresis deposition and field emission characteristics of p.. [754]
76. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [749]
77. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [748]
78. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [747]
79. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [743]
80. 电泳和电镀法增强碳纳米管场发射特性的研究 [742]
81. Study of AlN films doped by Si thermal diffusion [742]
82. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [741]
83. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [739]
84. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [735]
85. Controllable synthesis, growth mechanism and optical properties of.. [734]
86. An aluminum nitride photoconductor for X-ray detection [730]
87. 碳纳米管场发射自旋电子源的制备方法 (发明) [728]
88. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [723]
89. Si衬底上InP纳米线的晶体结构和光学性质 [720]
90. 一种生长高铟组分铟镓砷的方法 (发明) [718]
91. 低压化学气相淀积系统用可防止返油的水汽隔离油过滤器 (发明) [712]
92. Growth of diamond on silicon tips [712]
93. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [709]
94. A study of two-step growth and properties of In0.82Ga0.18As on InP [707]
95. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [701]
96. 半导体材料外延的废气中所含砷微粒的回收设备 (发明) [701]
97. Current-voltage and electron emission characteristics of diamond p.. [701]
98. 真空镀膜系统中真空室观察窗的转动档板 (实用新型) [695]
99. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [695]
100. Influence of the growth temperature of AlN nucleation layer on AlN.. [691]

下载量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [1810]
2. Long lifetime pure organic phosphorescence based on water soluble .. [1767]
3. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [1584]
4. GaAs微尖上碳纳米管的制备 [1563]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [1543]
6. Enhancement of optical properties and donor-related emissions in Y.. [396]
7. Improved field emission performance of carbon nanotube by introduc.. [347]
8. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [345]
9. Upconversion luminescence, intensity saturation effect, and therma.. [333]
10. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [312]
11. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [307]
12. 碳纳米管场发射阴极的制备及其场发射特性 [303]
13. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [289]
14. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [285]
15. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [283]
16. AlN插入层对a-AlGaN的外延生长的影响(英文) [282]
17. Influence of threading dislocations on GaN-based metal-semiconduct.. [276]
18. High performance back-illuminated MIS structure AlGaN solar-blind .. [274]
19. Investigation on growth related aspects of catalyst-free InP nanow.. [268]
20. 初始化生长条件对a-GaN中应变的影响 [267]
21. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [264]
22. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [262]
23. 氮化铝薄膜的硅热扩散掺杂研究(英文) [261]
24. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [259]
25. Annealing effect on the bipolar resistive switching characteristic.. [259]
26. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [258]
27. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [253]
28. Effect of buffer layer annealing temperature on the crystalline qu.. [251]
29. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [250]
30. Effect of buffer growth temperature on crystalline quality and opt.. [249]
31. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [249]
32. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [248]
33. Effect of trimethyl-aluminum preflow on the structure and strain p.. [245]
34. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [245]
35. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [243]
36. Influence of the growth temperature of AlN nucleation layer on AlN.. [243]
37. Electrophoretic deposition and field emission properties of patter.. [242]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [241]
39. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [241]
40. Effect of buffer layer annealing temperature on the crystalline qu.. [236]
41. GaN基MIS紫外探测器的电学及光电特性 [235]
42. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [234]
43. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [230]
44. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [227]
45. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [223]
46. Effect of interface barrier between carbon nanotube film and subst.. [222]
47. Growth and optical properties of catalyst-free InP nanowires on Si.. [221]
48. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [220]
49. Influence of buffer layer thickness and epilayer's growth temperat.. [219]
50. Field emission from single diamond particle [218]
51. Effect of buffer layer thickness and epilayer growth temperature o.. [217]
52. 新形貌二氧化硅材料的制备及光学性质研究 [216]
53. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [215]
54. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [215]
55. Influence of threading dislocations on GaN-based metal… [210]
56. HFCVD法制备SiC材料及室温光致发光 [207]
57. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [204]
58. 电泳和电镀法增强碳纳米管场发射特性的研究 [203]
59. 俄歇复合对同质结InGaAs探测器探测率的影响 [203]
60. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
61. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [200]
62. Valence band offset of GaN/diamond heterojunction measured… [200]
63. n型硅微尖场发射电子能谱的模拟计算 [200]
64. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [198]
65. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [197]
66. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [196]
67. Visualization and investigation of Si-C covalent bonding of single.. [195]
68. Current-voltage and electron emission characteristics of diamond p.. [195]
69. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [194]
70. Electrophoresis deposition and field emission characteristics of p.. [191]
71. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [191]
72. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [191]
73. InGaAs近红外线列焦面阵的研制进展 [190]
74. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [188]
75. 图形化的衬底电极改善碳纳米管的场发射特性 [187]
76. Controllable synthesis, growth mechanism and optical properties of.. [183]
77. Effect of GaN buffer layers on deposition of AlN films by DC react.. [182]
78. Influence of thermal annealing duration of buffer layer on the cry.. [178]
79. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [178]
80. A study of two-step growth and properties of In0.82Ga0.18As on InP [177]
81. An aluminum nitride photoconductor for X-ray detection [174]
82. SiC纳米颗粒的制备与发光特性研究 [174]
83. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [172]
84. Less contribution of nonradiative recombination in ZnO nails compa.. [172]
85. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [171]
86. Targeted delivery system based on magnetic mesoporous silica nanoc.. [169]
87. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [166]
88. 单颗粒CVD金刚石的场发射 [164]
89. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [164]
90. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [163]
91. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [163]
92. Improve the open-circuit voltage of ZnO solar cells with inserting.. [162]
93. Effect of In content of the buffer layer on crystalline quality an.. [157]
94. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [152]
95. 以碳纳米管阵列为场致发射阴极的X射线源研究 [152]
96. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [151]
97. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [150]
98. Near-infrared InGaAs FPAs for space applications [149]
99. Growth of diamond on silicon tips [148]
100. Influence of thermal annealing duration of buffer layer on the cry.. [148]