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    外部： 30734
    国内： 29147
    国外： 1587

  年访问量
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    外部： 13046
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1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [3086]
2. Full-duplex light communication with a monolithic multicomponent s.. [2840]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [2804]
4. AlGaN基宽禁带半导体光电材料与器件 [1342]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1197]
6. AlN插入层对a-AlGaN的外延生长的影响(英文) [1120]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1087]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1036]
9. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1035]
10. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1028]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1009]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1002]
13. Effect of trimethyl-aluminum preflow on the structure and strain p.. [992]
14. 初始化生长条件对a-GaN中应变的影响 [988]
15. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [973]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [954]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [915]
18. GaN基MIS紫外探测器的电学及光电特性 [900]
19. Improved field emission performance of carbon nanotube by introduc.. [886]
20. Influence of thermal annealing duration of buffer layer on the cry.. [882]
21. Valence band offset of GaN/diamond heterojunction measured… [857]
22. Influence of threading dislocations on GaN-based metal… [817]
23. Effect of GaN buffer layers on deposition of AlN films by DC react.. [807]
24. Determination of InN/Diamond Heterojunction Band Offset… [778]
25. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [769]
26. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
27. Study of AlN films doped by Si thermal diffusion [760]
28. 量子随机数高斯噪声信号发生器 [752]
29. 电泳和电镀法增强碳纳米管场发射特性的研究 [748]
30. Si衬底上InP纳米线的晶体结构和光学性质 [725]
31. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [725]
32. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [719]
33. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [697]
34. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
35. Fault diagnosis of satellite actuator based on bias-separated theo.. [543]
36. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [503]
37. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [401]
38. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [16]
39. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [7]
40. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [7]
41. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [6]
42. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [6]
43. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [6]
44. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [4]
45. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [4]
46. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [3]
47. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [2]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2548]
2. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [2334]
3. Full-duplex light communication with a monolithic multicomponent s.. [2256]
4. AlGaN基宽禁带半导体光电材料与器件 [618]
5. Improved field emission performance of carbon nanotube by introduc.. [361]
6. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [353]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [315]
8. 量子随机数高斯噪声信号发生器 [310]
9. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [301]
10. AlN插入层对a-AlGaN的外延生长的影响(英文) [296]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [288]
12. 初始化生长条件对a-GaN中应变的影响 [281]
13. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [278]
14. 氮化铝薄膜的硅热扩散掺杂研究(英文) [273]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [266]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [261]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [252]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [242]
19. GaN基MIS紫外探测器的电学及光电特性 [242]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [233]
21. Determination of InN/Diamond Heterojunction Band Offset… [229]
22. Influence of threading dislocations on GaN-based metal… [222]
23. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [221]
24. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [214]
25. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [213]
26. 电泳和电镀法增强碳纳米管场发射特性的研究 [209]
27. Valence band offset of GaN/diamond heterojunction measured… [206]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
29. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [201]
30. Influence of thermal annealing duration of buffer layer on the cry.. [197]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [189]
32. Effect of GaN buffer layers on deposition of AlN films by DC react.. [186]
33. Si衬底上InP纳米线的晶体结构和光学性质 [134]
34. Study of AlN films doped by Si thermal diffusion [130]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [48]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [15]
37. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [7]
38. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [6]
39. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [5]
40. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [4]
41. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [3]
42. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [3]
43. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [2]
44. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [2]