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  总访问量
 27708
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    外部： 27708
    国内： 26417
    国外： 1291

  年访问量
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    外部： 10020
    国内： 9389
    国外： 631

  月访问量
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    内部： 0
    外部： 1577
    国内： 1459
    国外： 118

访问量

访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2834]
2. Full-duplex light communication with a monolithic multicomponent s.. [2650]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [2498]
4. AlGaN基宽禁带半导体光电材料与器件 [1332]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1190]
6. AlN插入层对a-AlGaN的外延生长的影响(英文) [1114]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1083]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1031]
9. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1030]
10. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1024]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1007]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [998]
13. Effect of trimethyl-aluminum preflow on the structure and strain p.. [982]
14. 初始化生长条件对a-GaN中应变的影响 [980]
15. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [960]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [949]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [911]
18. GaN基MIS紫外探测器的电学及光电特性 [896]
19. Improved field emission performance of carbon nanotube by introduc.. [881]
20. Influence of thermal annealing duration of buffer layer on the cry.. [872]
21. Valence band offset of GaN/diamond heterojunction measured… [856]
22. Influence of threading dislocations on GaN-based metal… [811]
23. Effect of GaN buffer layers on deposition of AlN films by DC react.. [805]
24. Determination of InN/Diamond Heterojunction Band Offset… [777]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
26. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [764]
27. Study of AlN films doped by Si thermal diffusion [755]
28. 电泳和电镀法增强碳纳米管场发射特性的研究 [742]
29. 量子随机数高斯噪声信号发生器 [740]
30. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [723]
31. Si衬底上InP纳米线的晶体结构和光学性质 [722]
32. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [714]
33. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [696]
34. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
35. Fault diagnosis of satellite actuator based on bias-separated theo.. [539]
36. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [502]
37. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [391]
38. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [6]
39. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [3]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2296]
2. Full-duplex light communication with a monolithic multicomponent s.. [2067]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [2029]
4. AlGaN基宽禁带半导体光电材料与器件 [610]
5. Improved field emission performance of carbon nanotube by introduc.. [356]
6. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [349]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [311]
8. 量子随机数高斯噪声信号发生器 [299]
9. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [295]
10. AlN插入层对a-AlGaN的外延生长的影响(英文) [290]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [286]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [274]
13. 初始化生长条件对a-GaN中应变的影响 [273]
14. 氮化铝薄膜的硅热扩散掺杂研究(英文) [269]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [262]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [251]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [247]
18. GaN基MIS紫外探测器的电学及光电特性 [238]
19. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [230]
20. Determination of InN/Diamond Heterojunction Band Offset… [228]
21. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [228]
22. Influence of threading dislocations on GaN-based metal… [216]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [212]
24. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [212]
25. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [208]
26. Valence band offset of GaN/diamond heterojunction measured… [205]
27. 电泳和电镀法增强碳纳米管场发射特性的研究 [203]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
29. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [194]
30. Influence of thermal annealing duration of buffer layer on the cry.. [187]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [185]
32. Effect of GaN buffer layers on deposition of AlN films by DC react.. [184]
33. Si衬底上InP纳米线的晶体结构和光学性质 [131]
34. Study of AlN films doped by Si thermal diffusion [125]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [48]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [6]