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  总访问量
 23602
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    内部： 0
    外部： 23602
    国内： 22730
    国外： 872

  年访问量
 5914
  访问来源
    内部： 0
    外部： 5914
    国内： 5702
    国外： 212

  月访问量
 465
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    内部： 0
    外部： 465
    国内： 410
    国外： 55

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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2301]
2. Full-duplex light communication with a monolithic multicomponent s.. [2256]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [1969]
4. AlGaN基宽禁带半导体光电材料与器件 [1291]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1187]
6. AlN插入层对a-AlGaN的外延生长的影响(英文) [1106]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1077]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1024]
9. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1018]
10. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1016]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [988]
12. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [982]
13. Effect of trimethyl-aluminum preflow on the structure and strain p.. [975]
14. 初始化生长条件对a-GaN中应变的影响 [974]
15. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [956]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [943]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [900]
18. GaN基MIS紫外探测器的电学及光电特性 [893]
19. 一种场发射显示器件中阳极屏的制备方法 (发明) [889]
20. Improved field emission performance of carbon nanotube by introduc.. [869]
21. Influence of thermal annealing duration of buffer layer on the cry.. [862]
22. Valence band offset of GaN/diamond heterojunction measured… [850]
23. Influence of threading dislocations on GaN-based metal… [803]
24. Effect of GaN buffer layers on deposition of AlN films by DC react.. [803]
25. 一种制备倒梯形光刻胶截面的方法 (发明) [779]
26. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [776]
27. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [772]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
29. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [766]
30. Determination of InN/Diamond Heterojunction Band Offset… [765]
31. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [762]
32. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [756]
33. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [747]
34. Study of AlN films doped by Si thermal diffusion [741]
35. 电泳和电镀法增强碳纳米管场发射特性的研究 [740]
36. Si衬底上InP纳米线的晶体结构和光学性质 [720]
37. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [718]
38. 一种生长高铟组分铟镓砷的方法 (发明) [717]
39. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [700]
40. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [696]
41. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [660]
42. 量子随机数高斯噪声信号发生器 [655]
43. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
44. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [573]
45. Fault diagnosis of satellite actuator based on bias-separated theo.. [525]
46. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [502]
47. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [316]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1763]
2. Full-duplex light communication with a monolithic multicomponent s.. [1673]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [1500]
4. AlGaN基宽禁带半导体光电材料与器件 [570]
5. Improved field emission performance of carbon nanotube by introduc.. [344]
6. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [336]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [305]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [289]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [282]
10. 初始化生长条件对a-GaN中应变的影响 [267]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [264]
12. 氮化铝薄膜的硅热扩散掺杂研究(英文) [261]
13. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [261]
14. Effect of buffer layer annealing temperature on the crystalline qu.. [251]
15. Effect of trimethyl-aluminum preflow on the structure and strain p.. [244]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [241]
17. GaN基MIS紫外探测器的电学及光电特性 [235]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [226]
19. Determination of InN/Diamond Heterojunction Band Offset… [216]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [214]
21. 量子随机数高斯噪声信号发生器 [214]
22. Influence of threading dislocations on GaN-based metal… [208]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [207]
24. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
25. 电泳和电镀法增强碳纳米管场发射特性的研究 [201]
26. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [200]
27. Valence band offset of GaN/diamond heterojunction measured… [199]
28. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [191]
29. Effect of GaN buffer layers on deposition of AlN films by DC react.. [182]
30. Influence of thermal annealing duration of buffer layer on the cry.. [177]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [171]
32. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [139]
33. 一种场发射显示器件中阳极屏的制备方法 (发明) [138]
34. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [137]
35. Si衬底上InP纳米线的晶体结构和光学性质 [129]
36. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [117]
37. Study of AlN films doped by Si thermal diffusion [111]
38. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [100]
39. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [99]
40. 一种生长高铟组分铟镓砷的方法 (发明) [86]
41. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [84]
42. 一种制备倒梯形光刻胶截面的方法 (发明) [80]
43. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [71]
44. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [63]
45. Influence of buffer layer thickness and epilayer's growth temperat.. [48]