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访问统计


  总访问量
 3982
  访问来源
    内部： 0
    外部： 3982
    国内： 3705
    国外： 277

  年访问量
 2273
  访问来源
    内部： 0
    外部： 2273
    国内： 2187
    国外： 86

  月访问量
 49
  访问来源
    内部： 0
    外部： 49
    国内： 35
    国外： 14

访问量

访问量

1. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1187]
2. AlN插入层对a-AlGaN的外延生长的影响(英文) [1109]
3. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1080]
4. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1025]
5. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1016]
6. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [991]
7. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [984]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [979]
9. 初始化生长条件对a-GaN中应变的影响 [975]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [957]
11. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [947]
12. Effect of buffer layer annealing temperature on the crystalline qu.. [901]
13. GaN基MIS紫外探测器的电学及光电特性 [894]
14. Improved field emission performance of carbon nanotube by introduc.. [875]
15. Influence of thermal annealing duration of buffer layer on the cry.. [866]
16. Influence of threading dislocations on GaN-based metal… [806]
17. Effect of GaN buffer layers on deposition of AlN films by DC react.. [803]
18. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
19. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [757]
20. Study of AlN films doped by Si thermal diffusion [747]
21. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [703]
22. Influence of buffer layer thickness and epilayer's growth temperat.. [647]

下载量

1. Improved field emission performance of carbon nanotube by introduc.. [350]
2. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [308]
3. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [290]
4. AlN插入层对a-AlGaN的外延生长的影响(英文) [285]
5. 初始化生长条件对a-GaN中应变的影响 [268]
6. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [267]
7. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [263]
8. 氮化铝薄膜的硅热扩散掺杂研究(英文) [261]
9. Effect of buffer layer annealing temperature on the crystalline qu.. [252]
10. Effect of trimethyl-aluminum preflow on the structure and strain p.. [248]
11. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [245]
12. GaN基MIS紫外探测器的电学及光电特性 [236]
13. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [227]
14. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [217]
15. Influence of threading dislocations on GaN-based metal… [211]
16. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [201]
17. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
18. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [191]
19. Effect of GaN buffer layers on deposition of AlN films by DC react.. [182]
20. Influence of thermal annealing duration of buffer layer on the cry.. [181]
21. Study of AlN films doped by Si thermal diffusion [117]
22. Influence of buffer layer thickness and epilayer's growth temperat.. [48]