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Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
浏览  |  Adobe PDF(1549Kb)  |  收藏  |  浏览/下载：198/63  |  提交时间：2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics  
Van der Waals heterostructures of blue phosphorene and scandium-based MXenes monolayers 期刊论文
Journal of Applied Physics, 2019, 卷号: 126, 期号: 14, 页码: 10
作者:  G.Rehman;  S.A.Khan;  R.Ali;  I.Ahmad;  L.Y.Gan;  B.Amin
Adobe PDF(2807Kb)  |  收藏  |  浏览/下载：102/41  |  提交时间：2020/08/24
transition-metal carbides,electronic-structures,thermal-conductivity,magnetic-properties,optical-properties,performance,gap,origin,anodes,black,Physics  
Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
作者:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
Adobe PDF(1616Kb)  |  收藏  |  浏览/下载：158/56  |  提交时间：2020/08/24
2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures 期刊论文
Physical Chemistry Chemical Physics, 2019, 卷号: 21, 期号: 34, 页码: 18612-18621
作者:  M.Idrees;  H.U.Din;  R.Ali;  G.Rehman;  T.Hussain;  C.V.Nguyen
Adobe PDF(6608Kb)  |  收藏  |  浏览/下载：134/49  |  提交时间：2020/08/24
transition-metal dichalcogenides,electronic-structures,optical-properties,semiconductors,generation,graphene,Chemistry,Physics  
Theoretical Mechanistic Study of Nickel(0)Lewis Acid Catalyzed Polyfluoroarylcyanation of Alkynes Origin of Selectivity for C-CN Bond Activation 期刊论文
Organometallics, 2018, 卷号: 37, 期号: 15, 页码: 2594-2601
作者:  Ren, H.;  Du, G. F.;  Zhu, B.;  Yang, G. C.;  Yao, L. S.;  Guan, W.;  Su, Z. M.
Adobe PDF(1912Kb)  |  收藏  |  浏览/下载：290/107  |  提交时间：2019/09/17
carbon-carbon bonds  oxidative addition  organic-synthesis  h  activation  sigma-bond  cooperative catalysis  transition-elements  assisted cleavage  zerovalent nickel  metal-complexes  Chemistry  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
作者:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
Adobe PDF(483Kb)  |  收藏  |  浏览/下载：279/32  |  提交时间：2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
作者:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
收藏  |  浏览/下载：195/0  |  提交时间：2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 10, 页码: 8909-8916
作者:  Song, Q. G.;  Lin, T.;  Sun, X.;  Chu, B.;  Su, Z. S.;  Yang, H. S.;  Li, W. L.;  Lee, C. S.
Adobe PDF(433Kb)  |  收藏  |  浏览/下载：349/139  |  提交时间：2019/09/17
lead iodide  n-type semiconductor  anode buffer layer  organic  electronic devices  light-emitting-diodes  near-infrared photodetectors  field-effect  transistors  transition-metal oxides  hole-injection layer  solar-cells  photovoltaic cells  buffer layer  delayed fluorescence  spectral  response  Science & Technology - Other Topics  Materials Science  
Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
作者:  Liu, T.;  Xiang, D.;  Zheng, Y.;  Wang, Y. A.;  Wang, X. Y.;  Wang, L.;  He, J.;  Liu, L.;  Chen, W.
Adobe PDF(1999Kb)  |  收藏  |  浏览/下载：349/114  |  提交时间：2019/09/17
homogeneous p-n junctions and inverters  MoTe2/BN heterostructures  nonvolatile and programmable  photodoping in MoTe2 devices  photoresist-free  transition-metal dichalcogenides  black phosphorus  mos2  wse2  inverters  graphene  diodes  Chemistry  Science & Technology - Other Topics  Materials Science  Physics