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Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
Authors:  Liu, T.;  Xiang, D.;  Zheng, Y.;  Wang, Y. A.;  Wang, X. Y.;  Wang, L.;  He, J.;  Liu, L.;  Chen, W.
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homogeneous p-n junctions and inverters  MoTe2/BN heterostructures  nonvolatile and programmable  photodoping in MoTe2 devices  photoresist-free  transition-metal dichalcogenides  black phosphorus  mos2  wse2  inverters  graphene  diodes  Chemistry  Science & Technology - Other Topics  Materials Science  Physics