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Highly efficient and spectra stable warm white organic light-emitting diodes by the application of exciplex as the excitons adjustment layer 期刊论文
ORGANIC ELECTRONICS, 2018, 卷号: 62, 页码: 157-162
作者:  Wang, Ziqi;  Liu, Zemei;  Zhang, Heng;  Zhao, Bo;  Chen, Liuqing;  Xue, Lin;  Wang, Hua;  Li, Wenlian
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WOLEDs  Exciplex  EAL  Adjustment layer  Stable spectra  
Modification of back electrode with WO3 layer and its effect on Cu2ZnSn(S,Se)(4)-based solar cells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 113, 页码: 328-336
作者:  Shi, K.;  Yao, B.;  Li, Y. F.;  Ding, Z. H.;  Deng, R.;  Sui, Y. R.;  Zhang, Z. Z.;  Zhao, H. F.;  Zhang, L. G.
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CZTSSe  WO3  MoSe2  Barrier layer  Solar cell  Interface  efficiency  Physics  
Eu and F co-doped ZnO-based transparent electrodes for organic and quantum dot light-emitting diodes 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 20, 页码: 5542-5551
作者:  Luo, J. S.;  Lin, J.;  Zhang, N.;  Guo, X. Y.;  Zhang, L. G.;  Hu, Y. S.;  Lv, Y.;  Zhu, Y. F.;  Liu, X. Y.
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oxide thin-films  chemical-vapor-deposition  atomic layer deposition  pulsed-laser deposition  zinc-oxide  optical-properties  absorption  growth  Materials Science  Physics  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
作者:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
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Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Improved performance of optical phased arrays assisted by transparent graphene nanoheaters and air trenches 期刊论文
Rsc Advances, 2018, 卷号: 8, 期号: 15, 页码: 8442-8449
作者:  Wang, Y. B.;  Liang, L.;  Chen, Y. Y.;  Jia, P.;  Qin, L.;  Liu, Y.;  Ning, Y. Q.;  Wang, L. J.
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silicon-on-insulator  layer graphene  modulator  transistors  switch  films  lidar  Chemistry  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
作者:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
收藏  |  浏览/下载:199/0  |  提交时间:2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 10, 页码: 8909-8916
作者:  Song, Q. G.;  Lin, T.;  Sun, X.;  Chu, B.;  Su, Z. S.;  Yang, H. S.;  Li, W. L.;  Lee, C. S.
浏览  |  Adobe PDF(433Kb)  |  收藏  |  浏览/下载:361/142  |  提交时间:2019/09/17
lead iodide  n-type semiconductor  anode buffer layer  organic  electronic devices  light-emitting-diodes  near-infrared photodetectors  field-effect  transistors  transition-metal oxides  hole-injection layer  solar-cells  photovoltaic cells  buffer layer  delayed fluorescence  spectral  response  Science & Technology - Other Topics  Materials Science  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
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threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics  
Self-consistent adjoint analysis for topology optimization of electromagnetic waves 期刊论文
Journal of Computational Physics, 2018, 卷号: 361, 页码: 353-376
作者:  Deng, Y. B.;  Korvink, J. G.
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Topology optimization  Self-consistent adjoint sensitivity  Electromagnetic wave  Perfectly matched layers  perfectly matched layer  mixed finite-elements  level set method  shape  optimization  lie symmetries  design  equations  fluids  Computer Science  Physics  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering