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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
浏览  |  Adobe PDF(3625Kb)  |  收藏  |  浏览/下载：126/42  |  提交时间：2021/07/06
In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
Adobe PDF(988Kb)  |  收藏  |  浏览/下载：121/50  |  提交时间：2021/07/06
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors 期刊论文
Npj 2d Materials and Applications, 2020, 卷号: 4, 期号: 1, 页码: 7
作者:  Y. P. Jia,Z. M. Shi,W. T. Hou,H. Zang,K. Jiang,Y. Chen,S. L. Zhang,Z. B. Qi,T. Wu,X. J. Sun and D. B. Li
Adobe PDF(2860Kb)  |  收藏  |  浏览/下载：124/43  |  提交时间：2021/07/06