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Charging storage phosphors using a white flashlight via the upconversion approach 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 19, 页码: 6
作者:  T. X. Shi;  F. Chen;  X. Y. Zhao;  J. H. Zhang;  X. J. Wang and F. Liu
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载:118/42  |  提交时间:2021/07/06