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Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
Adobe PDF(1681Kb)  |  收藏  |  浏览/下载:472/135  |  提交时间:2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core-shell photocatalyst with superior activity RhB degradation and working mechanism 期刊论文
Powder Technology, 2018, 卷号: 327, 页码: 489-499
作者:  Wang, D. D.;  Han, D. L.;  Yang, J. H.;  Wang, J.;  Li, X. Y.;  Song, H.
Adobe PDF(5882Kb)  |  收藏  |  浏览/下载:499/178  |  提交时间:2019/09/17
Magnetic separation  Core-shell structure  ZnO nanorods  Au  nanoparticles  Photocatalysis  zno  performance  nanocomposites  microspheres  nanoparticles  irradiation  nanowire  Engineering  
The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 2, 页码: 5
作者:  Chen, Y. R.;  Zhang, Z. W.;  Li, Z. M.;  Jiang, H.;  Miao, G. Q.;  Song, H.
Adobe PDF(1064Kb)  |  收藏  |  浏览/下载:367/99  |  提交时间:2019/09/17
AlGaN  inserted layers  p-i-n structures  ultraviolet photodetectors  suppression  diodes  Materials Science  Physics  
Influence of threading dislocations on GaN-based metal… 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 1, 页码: 011108-1
作者:  黎大兵;  孙晓娟;  宋航;  李志明;  陈一仁;  缪国庆;  蒋红
Adobe PDF(814Kb)  |  收藏  |  浏览/下载:501/108  |  提交时间:2012/05/12