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Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 50, 页码: 43299-43304
作者:  Yu, M. M.;  Li, H.;  Liu, H.;  Qin, F. L.;  Gao, F.;  Hu, Y. X.;  Dai, M. J.;  Wang, L. F.;  Feng, W.;  Hu, P. A.
浏览  |  Adobe PDF(3276Kb)  |  收藏  |  浏览/下载：358/100  |  提交时间：2019/09/17
Ga0.84In1.86Se  alloy engineering  photodetectors  two-dimensional  materials  III-VI group semiconductors  temperature  gase  inse  deposition  graphene  mobility  growth  films  Science & Technology - Other Topics  Materials Science  
Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 10, 页码: 8909-8916
作者:  Song, Q. G.;  Lin, T.;  Sun, X.;  Chu, B.;  Su, Z. S.;  Yang, H. S.;  Li, W. L.;  Lee, C. S.
浏览  |  Adobe PDF(433Kb)  |  收藏  |  浏览/下载：361/142  |  提交时间：2019/09/17
lead iodide  n-type semiconductor  anode buffer layer  organic  electronic devices  light-emitting-diodes  near-infrared photodetectors  field-effect  transistors  transition-metal oxides  hole-injection layer  solar-cells  photovoltaic cells  buffer layer  delayed fluorescence  spectral  response  Science & Technology - Other Topics  Materials Science