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Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
Adobe PDF(1456Kb)  |  收藏  |  浏览/下载:159/48  |  提交时间:2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Pressure-induced electron phase transitions of alpha-As2Te3 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 685
作者:  Zhang, Y. H.;  Y. M. Ma;  A. H. Geng;  C. Y. Zhu;  G. T. Liu;  Q. Tao;  F. F. Li;  Q. L. Wang;  Y. Li;  X. Wang and P. W. Zhu
Adobe PDF(3826Kb)  |  收藏  |  浏览/下载:342/80  |  提交时间:2017/09/11