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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：184/36  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Optical Properties Investigation of p-Type ZnO Film Based on Doping by Diffusion 期刊论文
Spectroscopy and Spectral Analysis, 2015, 卷号: 35, 期号: 7
作者:  F. Chen;  D. Fang;  S. P. Wang;  X. Fang;  J. L. Tang;  H. F. Zhao;  F. Fang;  X. Y. Chu;  J. H. Li;  F. Wang;  X. H. Wang;  G. J. Liu;  X. H. Ma and Z. P. Wei
浏览  |  Adobe PDF(288Kb)  |  收藏  |  浏览/下载：379/130  |  提交时间：2016/08/04