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Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence 期刊论文
Materials, 2020, 卷号: 13, 期号: 19, 页码: 10
作者:  Y. Song,Y. Y. Chen,L. G. Zhang,Y. G. Zeng,C. Qiu,L. Liang,Y. X. Lei,P. Jia,L. Qin,Y. Q. Ning and L. J. Wang
浏览  |  Adobe PDF(7701Kb)  |  收藏  |  浏览/下载：161/65  |  提交时间：2021/07/06
Design of a Surface Plasmon Resonance-Enhanced ZnO Ultraviolet Photodetector Based on a Sub-wavelength Metal Grating Covered with a High-Refractive-Index Medium 期刊论文
Journal of Electronic Materials, 2020, 卷号: 49, 期号: 8, 页码: 4469-4473
作者:  J. Yu,H. J. Men,J. W. Zhang,X. W. Zhang and N. Tian
浏览  |  Adobe PDF(1165Kb)  |  收藏  |  浏览/下载：146/44  |  提交时间：2021/07/06
Design and Fabrication of 1160-nm Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser 期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2020, 卷号: 47, 期号: 7
作者:  Z. Zhang,Y. Ning,J. Zhang,J. Zhang,Y. Zeng,J. Zhang,X. Zhang,Y. Zhou,Y. Huang,L. Qin,Y. Liu and L. Wang
浏览  |  Adobe PDF(948Kb)  |  收藏  |  浏览/下载：214/60  |  提交时间：2021/07/06
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin;  Y.L.Zhou
浏览  |  Adobe PDF(1050Kb)  |  收藏  |  浏览/下载：208/88  |  提交时间：2020/08/24
Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：531/234  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science