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Surface organic ligand-passivated quantum dots: toward high-performance light-emitting diodes with long lifetimes 期刊论文
Journal of Materials Chemistry C, 2021, 卷号: 9, 期号: 7, 页码: 2483-2490
作者:  L. Wang;  Y. Lv;  J. Lin;  J. Zhao;  X. Liu;  R. Zeng;  X. Wang and B. Zou
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Laser-assisted two dimensional material electronic and optoelectronic devices 期刊论文
Journal of Materials Chemistry C, 2021, 卷号: 9, 期号: 8, 页码: 2599-2619
作者:  B.-W. Su;  Z. X.-L;  X. W;  G. H.-W;  Z. Y.-Z;  L. Z.-B and T. J.-G
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The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
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threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics