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Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin;  Y.L.Zhou
浏览  |  Adobe PDF(1050Kb)  |  收藏  |  浏览/下载：291/128  |  提交时间：2020/08/24
Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：615/271  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science