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Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport 期刊论文
Npj Computational Materials, 2019, 卷号: 5, 页码: 6
作者:  D.Wang;  D.Han;  D.West;  N.K.Chen;  S.Y.Xie;  W.Q.Tian;  V.Meunier
浏览  |  Adobe PDF(1537Kb)  |  收藏  |  浏览/下载:313/85  |  提交时间:2020/08/24
total-energy calculations,mos2,Chemistry,Materials Science